The use of stressed silicon in MOS transistors and CMOS structures I. G. NeizvestnyiV. A. Gridchin Physics and Technology of MOS Transistors and CMOS Structures 28 March 2009 Pages: 71 - 86
Electrical properties of InAs-SiO2-In2O3 MIS structures with a modified interface N. A. ValishevaA. A. GuzevZ. V. Panova Physics and Technology of MOS Transistors and CMOS Structures 28 March 2009 Pages: 87 - 94
Emission tomography of plasma in technological reactors of microelectronics A. V. FadeevK. V. RudenkoA. A. Orlikovskii Dynamics of Technological Processes and Equipment 28 March 2009 Pages: 95 - 109
Clean boxes with artificial climate for atomic force microscopy: New possibilities for diagnostics of nanodimensional objects A. L. TolstikhinaR. V. GainutdinovV. D. Shestakov Dynamics of Technological Processes and Equipment 28 March 2009 Pages: 110 - 117
Ge-nanocluster formation in Ge-doped polysilicon films under oxidation and heat treatment A. A. KovalevskyA. S. StrogovaD. V. Plyakin Thin Films 28 March 2009 Pages: 118 - 129
Samarium-atom adsorption and desorption on iridium A. K. OrudzhovA. O. DashdemirovA. K. Elchieva Thin Films 28 March 2009 Pages: 130 - 133
Nonholonomic control in quantum computers based on ions in a trap A. S. Burkov Quantum-Computing Devices 28 March 2009 Pages: 134 - 139
Influence of noise parameters of integral operational amplifiers and voltage comparators and their nonlinear distortions on presentation accuracy of signals being processed T. M. Agakhanyan Circuit Analysis and Synthesis 28 March 2009 Pages: 140 - 145