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The use of stressed silicon in MOS transistors and CMOS structures

  • Physics and Technology of MOS Transistors and CMOS Structures
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Abstract

In the review, the changes in electronic processes in the channel of the MOS transistor taking place under applying mechanical stresses are described. It is shown that the use of the stressed films of silicon nitride, the source and sink from the germanium-silicon alloy, etc., leads to an increase in the mobility of holes and electrons and to an increase in the efficiency of transistor operation. The application of this method to CMOS structures is also described.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630 090, Russia

    I. G. Neizvestnyi

  2. Novosibirsk State Technical University, pr. Marksa 30, Novosibirsk, 630 092, Russia

    V. A. Gridchin

Authors
  1. I. G. Neizvestnyi
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  2. V. A. Gridchin
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Correspondence to I. G. Neizvestnyi.

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Original Russian Text © I.G. Neizvestnyi, V.A. Gridchin, 2009, published in Mikroelektronika, 2009, Vol. 38, No.2, pp. 83–98.

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Neizvestnyi, I.G., Gridchin, V.A. The use of stressed silicon in MOS transistors and CMOS structures. Russ Microelectron 38, 71–86 (2009). https://doi.org/10.1134/S1063739709020012

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