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Emission tomography of plasma in technological reactors of microelectronics

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Abstract

Optical emission tomography is a promising method for the analysis of the lateral distribution of the particle density in plasma of plasma-chemical reactors, which is very critical in technological processes of microelectronics on large-diameter wafers. In this work, we propose an algorithm of the tomographic reconstruction of the 2D distribution of plasma components in the cross section of the reactor by their spectrally allowed optical emission at an extremely small number of recording angles. The geometry of the collection of the tomographic data was selected so that it would be compatible with the existing industrial types of plasma reactors. The algorithm is tested for artificially created phantoms in a physical model experiment and is applied to an actual plasma chemical reactor.

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Authors and Affiliations

  1. Institute of Physics and Technology, Russian Academy of Sciences, Nakhimovskii pr. 36, Moscow, 117218, Russia

    A. V. Fadeev, K. V. Rudenko, V. F. Lukichev & A. A. Orlikovskii

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  1. A. V. Fadeev
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  2. K. V. Rudenko
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  3. V. F. Lukichev
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  4. A. A. Orlikovskii
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Correspondence to A. V. Fadeev.

Additional information

Original Russian Text © A.V. Fadeev, K.V. Rudenko, V.F. Lukichev, A.A. Orlikovskii, 2009, published in Mikroelektronika, 2009, Vol. 38, No.2, pp. 107–121.

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Fadeev, A.V., Rudenko, K.V., Lukichev, V.F. et al. Emission tomography of plasma in technological reactors of microelectronics. Russ Microelectron 38, 95–109 (2009). https://doi.org/10.1134/S1063739709020036

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  • DOI: https://doi.org/10.1134/S1063739709020036

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