Abstract
The effect of composition of the electrolyte used in producing a thin anodic oxide layer at the surface of a semiconductor substrate on the electrical properties of the InAs-SiO2-In2O3 metal-insulator-semiconductor structures is studied. It is shown that introduction of ammonium fluoride into the electrolyte results in the formation of an interface with the density of surface states below 5 × 1010 cm−2 eV−1, the built-in charge (4–5 × 1011 cm−2, and the maximum relaxation time of the surface potential.
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Original Russian Text © N.A. Valisheva, A.A. Guzev, A.P. Kovchavtsev, G.L. Kuryshev, T.A. Levtsova, Z.V. Panova, 2009, published in Mikroelektronika, 2009, Vol. 38, No.2, pp. 99–106.
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Valisheva, N.A., Guzev, A.A., Kovchavtsev, A.P. et al. Electrical properties of InAs-SiO2-In2O3 MIS structures with a modified interface. Russ Microelectron 38, 87–94 (2009). https://doi.org/10.1134/S1063739709020024
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DOI: https://doi.org/10.1134/S1063739709020024