1. Nano- and micrometer-scale thin-film-interconnection failure theory and simulation and metallization lifetime prediction, Part 2: Polycrystalline-line degradation and bulk failure

   • K. A. Valiev
   • R. V. Goldstein
   • M. E. Sarychev

   Device and Process Modeling and Simulation 20 May 2010 Pages: 145 - 157

2. Mathematical simulation of the processes of generation of “shock waves” in a two-dimensional electron gas in the channel of a ballistic field-effect transistor

   • I. A. Semenikhin
   • E. A. Vostrikova

   Device and Process Modeling and Simulation 20 May 2010 Pages: 158 - 164

3. Synthesis and investigation of new materials in MIS structures for the development of physical foundations of CMOS technologies of nanoelectronics

   • A. V. Zenkevich
   • Yu. Yu. Lebedinskii
   • M. Fanchulli

   Dynamics of Technological Processes 20 May 2010 Pages: 165 - 174

4. Effect of broadening the discrete levels of the granule on the character of the current-voltage characteristic of a single-electron diode

   • A. V. Babich
   • V. V. Pogosov
   • A. G. Kravtsova

   Dynamics of Technological Processes 20 May 2010 Pages: 175 - 181

5. Chemical nanotechnology of oxide and nitride low-dimensional structures on a semiconductor matrix

   • Yu. K. Ezhovskii

   Dynamics of Technological Processes 20 May 2010 Pages: 182 - 189

6. Self-organization of germanium highly ordered nanoclusters by the deposition of polycrystalline silicon films doped with germanium

   • A. A. Kovalevskii
   • N. V. Babushkina
   • A. C. Strogova

   Thin Films 20 May 2010 Pages: 190 - 198

7. Low temperature pulsed gas-phase deposition of thin layers of metallic ruthenium for micro- and nanoelectronics: Part 2. Kinetics of the growth of ruthenium layers

   • V. Yu. Vasilyev

   Thin Films 20 May 2010 Pages: 199 - 209

8. Delta-sigma modulator with a 50-MHz sampling rate implemented in 0.18-μm CMOS technology

   • A. S. Korotkov
   • M. M. Pilipko
   • J. Hauer

   Circuit Analysis and Synthesis 20 May 2010 Pages: 210 - 219