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Chemical nanotechnology of oxide and nitride low-dimensional structures on a semiconductor matrix

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Abstract

The results of the quantitative approach for assessing the activity of solid surface from the values of inductive constants during the implementation processes of molecular layering (atomic layer deposition) on semiconductor matrixes are presented. For example, features of synthesis of oxide and nitride surface nanostructures on silicon show the possibility of the proposed approach to optimize the conditions of their formation and further development of chemical nanotechnology of low-dimensional systems.

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Authors and Affiliations

  1. St. Petersburg State Technological Institute (Technical University), St. Petersburg, Russia

    Yu. K. Ezhovskii

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  1. Yu. K. Ezhovskii
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Correspondence to Yu. K. Ezhovskii.

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Original Russian Text © Yu.K. Ezhovskii, 2010, published in Mikroelektronika, 2010, Vol. 39, No. 3, pp. 202–209

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Ezhovskii, Y.K. Chemical nanotechnology of oxide and nitride low-dimensional structures on a semiconductor matrix. Russ Microelectron 39, 182–189 (2010). https://doi.org/10.1134/S1063739710030054

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