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Low temperature pulsed gas-phase deposition of thin layers of metallic ruthenium for micro- and nanoelectronics: Part 2. Kinetics of the growth of ruthenium layers

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Abstract

Experimental data of growth kinetics of layers of ruthenium in a temperature range of 110–350°C by pulsed deposition from the gas phase with the participation of the carbonyl-diene precursor complex Ru(CO)3(C6H8), as well as NH3 and N2O as the second reagent are generalized.

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Authors and Affiliations

  1. Department of semiconductor devices and microelectronics (SDaME), Novosibirsk State Technical University, Novosibirsk, Russia

    V. Yu. Vasilyev

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  1. V. Yu. Vasilyev
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Correspondence to V. Yu. Vasilyev.

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Original Russian Text © V.Yu. Vasilyev, 2010, published in Mikroelektronika, 2010, Vol. 39, No. 3, pp. 219–229

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Vasilyev, V.Y. Low temperature pulsed gas-phase deposition of thin layers of metallic ruthenium for micro- and nanoelectronics: Part 2. Kinetics of the growth of ruthenium layers. Russ Microelectron 39, 199–209 (2010). https://doi.org/10.1134/S1063739710030078

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  • DOI: https://doi.org/10.1134/S1063739710030078

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