Evolution of Current Transport Models for Engineering Applications Andreas GehringSiegfried Selberherr OriginalPaper Pages: 149 - 155
A Legendre Polynomial Solver for the Langevin Boltzmann Equation Christoph JungemannBernd Meinerzhagen OriginalPaper Pages: 157 - 160
A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement Borna ObradovicPhilippe MatagneMartin D. Giles OriginalPaper Pages: 161 - 164
A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability Haldun KufluogluMuhammad Ashraful Alam OriginalPaper Pages: 165 - 169
Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks L. YangJ. R. WatlingJ. R. Barker OriginalPaper Pages: 171 - 175
TCAD Process/Device Modeling Challenges and Opportunities for the Next Decade Martin D. Giles OriginalPaper Pages: 177 - 182
A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices Tibor GrasserRobert KosikSiegfried Selberherr OriginalPaper Pages: 183 - 187
Multi-Dimensional Tunneling in Density-Gradient Theory M. G. AnconaK. Lilja OriginalPaper Pages: 189 - 192
TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1−x Ge x Dual Channel pMOSFETs on (001) Relaxed Si1−y Ge y C. D. NguyenA. T. PhamB. Meinerzhagen OriginalPaper Pages: 193 - 197
Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors G. Iannaccone OriginalPaper Pages: 199 - 202
Intrinsic Parameter Fluctuations in Conventional MOSFETs at the Scaling Limit: A Statistical Study Fikru Adamu-LemaGareth RoyScott Roy OriginalPaper Pages: 203 - 206
Influence of Ballistic Effects in Ultra-Small MOSFETs J. Saint MartinV. Aubry-FortunaC. Chassat OriginalPaper Pages: 207 - 210
Random Doping Fluctuations of Small-Signal Parameters in Nanoscale Semiconductor Devices Petru AndreiIsaak Mayergoyz OriginalPaper Pages: 211 - 214
Modeling of Transport Through Submicron Semiconductor Structures: A Direct Solution to the Coupled Poisson-Boltzmann Equations D. CsontosS. E. Ulloa OriginalPaper Pages: 215 - 219
Simulation of Schottky Barrier Diodes with a Direct Solver for the Boltzmann-Poisson System Andreas DomaingoFerdinand Schürrer OriginalPaper Pages: 221 - 225
Robust Computational Models of Quantum Transport in Electronic Devices A. I. FedoseyevA. PrzekwasM. S. Wartak OriginalPaper Pages: 231 - 234
Accurate Deterministic Numerical Simulation of p-n Junctions P. GonzálezA. GodoyJ. A. Carrillo OriginalPaper Pages: 235 - 238
Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept R. HagenbeckS. DeckerG. Tempel OriginalPaper Pages: 239 - 242
Subthreshold Mobility Extraction for SOI-MESFETs K. TarikS. AhmedT. J. Thornton OriginalPaper Pages: 243 - 246
Random Telegraph Noise in 30 nm FETs with Conventional and High-κ Dielectrics Angelica LeeAndrew R. BrownScott Roy OriginalPaper Pages: 247 - 250
Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors Yiming LiJam-Wem LeeHung-Mu Chou OriginalPaper Pages: 251 - 255
A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors Yiming LiShao-ming Yu OriginalPaper Pages: 257 - 261
Local Discontinuous Galerkin Methods for Moment Models in Device Simulations: Formulation and One Dimensional Results Yunxian LiuChi-Wang Shu OriginalPaper Pages: 263 - 267
RF Performance of Strained SiGe pMOSFETs: Linearity and Gain Wei MaSavas Kaya OriginalPaper Pages: 269 - 272
Strain-Dependent Hole Masses and Piezoresistive Properties of Silicon Kazunori Matsuda OriginalPaper Pages: 273 - 276
3D Electrostatics of Carbon Nanotube Field-Effect Transistors Neophytos NeophytouMark LundstromJing Guo OriginalPaper Pages: 277 - 280
Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers Anisur RahmanMark LundstromAvik W. Ghosh OriginalPaper Pages: 281 - 285
Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and Mainstream VLSI Technology M. V. FischettiS. E. LauxA. Kumar OriginalPaper Pages: 287 - 293
Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs F. GámizA. GodoyC. Sampedro OriginalPaper Pages: 295 - 298
Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AlGaN/GaN HEMTs Shinya YamakawaStephen GoodnickMarco Saraniti OriginalPaper Pages: 299 - 303
A Self-Consistent Event Biasing Scheme for Statistical Enhancement M. NedjalkovS. AhmedD. Vasileska OriginalPaper Pages: 305 - 309
3D Monte Carlo Analysis of Discrete Dopant Effects on Electron noise in Si Devices P. DollfusJ. E. VeláZquezS. Galdin-Retailleau OriginalPaper Pages: 311 - 315
Smart Dust: Monte Carlo Simulation of Self-Organised Transport John BarkerAngelos Barmpoutis OriginalPaper Pages: 317 - 321
Efficient Memory Management for Cellular Monte Carlo Algorithm J. BranlardS. J. AboudM. Saraniti OriginalPaper Pages: 323 - 327
An Efficient Monte Carlo Procedure for Studying Hole Transport in Doped Semiconductors F. M. Gómez-camposS. Rodríguez-bolívarJ. E. Carceller OriginalPaper Pages: 329 - 332
Monte Carlo Simulation of Carbon Nanotube Devices Sayed HasanJing GuoMark Lundstrom OriginalPaper Pages: 333 - 336
Modeling of FinFET: 3D MC Simulation Using FMM and Unintentional Doping Effects on Device Operation Hasanur R. KhanDragica VasileskaClemens Heitzinger OriginalPaper Pages: 337 - 340
Scattering from Body Thickness Fluctuations in Double Gate MOSFETs: An ab initio Monte Carlo Simulation Study C. RiddetA. R. BrownA. Asenov OriginalPaper Pages: 341 - 345
The Effective Conduction Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation Bo WuTing-wei Tang OriginalPaper Pages: 347 - 350
A First Principles Alloy Scattering Approach for Monte Carlo Hole Mobility Calculations Barry ZormanSanthosh KrishnanMark Van Schilfgaarde OriginalPaper Pages: 351 - 354
Full Quantum Mechanical Simulation of Ultra-Small Silicon Devices in Three-Dimensions: Physics and Issues M. J. GilbertD. K. Ferry OriginalPaper Pages: 355 - 358
A Quantum Many-Body Density Matrix Model for Sub-Femtosecond Transport in Mesoscopic Structures Irena KnezevicDavid K. Ferry OriginalPaper Pages: 359 - 362
Parallel Algorithms for Large-Scale Nanoelectronics Simulations Using NESSIE Eric PolizziAhmed Sameh OriginalPaper Pages: 363 - 366
Modelling of Quantum Electromechanical Systems Antti-Pekka JauhoTomáš NovotnýChristian Flindt OriginalPaper Pages: 367 - 371
Atomistic Simulation of Carbon Nanotube Field-Effect Transistors Using Non-Equilibrium Green’s Function Formalism Jing GuoSupriyo DattaMark Lundstrom OriginalPaper Pages: 373 - 377
Arbitrary Crystallographic Orientation in QDAME with Ge 7.5 nm DGFET Examples S. E. Laux OriginalPaper Pages: 379 - 385
Analysis of Strained-Si Device including Quantum Effect Ryo TanabeTakahiro YamasakiHideki Oka OriginalPaper Pages: 387 - 391
Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium Green’s Function Formalism Marc BescondJean-Luc AutranMichel Lannoo OriginalPaper Pages: 393 - 396
