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Journal of Computational Electronics

, Volume 3, Issue 3–4, pp 251–255 | Cite as

Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors

  • Yiming LiEmail author
  • Jam-Wem Lee
  • Hung-Mu Chou
Article

Abstract

In this paper we numerically examine the electrical characteristics of surrounding-gate strained silicon nanowire field effect transistors (FETs) by changing the radius (RSiGe) of silicon-germanium (SiGe) wire. Due to the higher electron mobility, the n-type FETs with strained silicon channel films do enhance driving capability (∼8% increment on the drain current) in comparison with the pure Si one. The leakage current and transfer characteristics, the threshold-voltage (V t ), the drain induced barrier height lowering (DIBL), and the gate capacitance (C G ) are estimated with respect to different gate length (L G ), gate bias (V G ), and RSiGe. For short channel effects, such as V t roll-off and DIBL, the surrounding-gate strained silicon nanowire FET sustains similar characteristics with the pure Si one.

Keywords

strained silicon nanowire FET surrounding-gate drain induced barrier height lowering threshold-voltage roll-off gate capacitance simulation 

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Copyright information

© Springer Science + Business Media, Inc. 2004

Authors and Affiliations

  1. 1.Department of Computational NanoelectronicsNano Device LaboratoriesHsinchuTaiwan
  2. 2.Microelectronics and Information Systems Research CenterNational Chiao Tung UniversityHsinchuTaiwan
  3. 3.Department of ElectrophysicsNational Chiao Tung UniversityHsinchuTaiwan

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