Abstract
A full-band Cellular Monte Carlo (CMC) approach is applied to the simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections included via the effective potential method. The best fit Gaussian parameters of the effective potential method for different Al contents and gate biases are calculated from the equilibrium electron density. The extracted parameters are used for quantum corrections included in the full-band CMC device simulator. The charge set-back from the interface is clearly observed. However, the overall current of the device is close to the classical solution due to the dominance of polarization charge.
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Yamakawa, S., Goodnick, S., Aboud, S. et al. Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AlGaN/GaN HEMTs. J Comput Electron 3, 299–303 (2004). https://doi.org/10.1007/s10825-004-7065-6
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DOI: https://doi.org/10.1007/s10825-004-7065-6