Abstract
Mobility calculation is a difficult task due to the stochastic nature of the particles in a device. This is especially true for a device operated in the sub-threshold region because the transport is a combination of diffusion and drift albeit diffusion dominated. As a result, one can calculate the mobility based on the drift and the diffusion techniques for a device operated in the subthreshold regime. We have developed a transport model, based on the solution of the Boltzmann Transport Equation, for modeling n-channel silicon-on-insulator (SOI) MOSFETs and MESFETs using the Ensemble Monte Carlo technique. All relevant scattering mechanisms for the silicon material system have been included in the model. The model is used to calculate both the diffusion coefficient and the drift based mobility and the results are compared with available experimental values. The mobility of the equivalent SOI MESFET device is a factor of 3–5 times higher than that of the MOSFET in the sub-threshold regime.
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Tarik, K., Ahmed, S., Vasileska, D. et al. Subthreshold Mobility Extraction for SOI-MESFETs. J Comput Electron 3, 243–246 (2004). https://doi.org/10.1007/s10825-004-7054-9
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DOI: https://doi.org/10.1007/s10825-004-7054-9