Volume 16, Issue 4

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December 2017

Special Focus Topic Issue on Computational Electronics of Emerging Memory Elements

Issue Editors:

Blanka Magyari-Köpe,
Derek Stewart

22 articles in this issue

Introduction to the special focus topic issue on computational electronics of emerging memory elements
Blanka Magyari-Köpe
Derek Stewart
EditorialNotes 17 November 2017 Pages: 995 - 996
Grüneisen parameters and thermal conductivity in the phase change compound GeTe
Emanuele Bosoni
Gabriele Cesare Sosso
Marco Bernasconi
S.I.: Computational Electronics of Emerging Memory Elements 17 August 2017 Pages: 997 - 1002
Ab initio calculation of thermal boundary resistance at the interface of metals with GeTe, In\(_3\)SbTe\(_2\) and In\(_2\)GeTe\(_3\) phase change compounds
S. Gabardi
D. Campi
M. Bernasconi
S.I. : Computational Electronics of Emerging Memory Elements 25 October 2017 Pages: 1003 - 1010
Kinetic and thermodynamic heterogeneity: an intrinsic source of variability in Cu-based RRAM memories
Sergiu Clima
Attilio Belmonte
Geoffrey Pourtois
S.I.: Computational Electronics of Emerging Memory Elements 04 August 2017 Pages: 1011 - 1016
Comprehensive modeling of electrochemical metallization memory cells
Stephan Menzel
S.I.: Computational Electronics of Emerging Memory Elements 07 September 2017 Pages: 1017 - 1037
General considerations and implications of isolated oxygen vacancies in oxide-based filamentary ReRAM devices
Sebastian Wicklein
S.I.: Computational Electronics of Emerging Memory Elements 24 August 2017 Pages: 1038 - 1044
Theoretical insights and experimental characterization of \(\hbox {HfO}_2\)-based OxRRAMs operation
B. Traore
P. Blaise
B. Sklénard
S.I. : Computational Electronics of Emerging Memory Elements 10 October 2017 Pages: 1045 - 1056
Filament-to-dielectric band alignments in \(\hbox {TiO}_{2}\) and \(\hbox {HfO}_{2}\) resistive RAMs
Ze-Han Wu
Kan-Hao Xue
Xiang-Shui Miao
S.I. : Computational Electronics of Emerging Memory Elements 06 September 2017 Pages: 1057 - 1065
Ab initio modeling of transport and thermodynamic stability for hafnia memristive devices
Xiaoliang Zhong
Ivan Rungger
Olle Heinonen
S.I. : Computational Electronics of Emerging Memory Elements 05 September 2017 Pages: 1066 - 1076
Multiscale modeling of oxide RRAM devices for memory applications: from material properties to device performance
Luca Larcher
Andrea Padovani
S.I. : Computational Electronics of Emerging Memory Elements 25 October 2017 Pages: 1077 - 1084
Toward reliable RRAM performance: macro- and micro-analysis of operation processes
Gennadi Bersuker
Dmitry Veksler
Kin P. Cheung
S.I. : Computational Electronics of Emerging Memory Elements 09 November 2017 Pages: 1085 - 1094
\({ SIM}^2{ RRAM}\): a physical model for RRAM devices simulation
Marco A. Villena
Juan B. Roldán
Mario Lanza
S.I.: Computational Electronics of Emerging Memory Elements 10 October 2017 Pages: 1095 - 1120
Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications
D. Ielmini
V. Milo
S.I. : Computational Electronics of Emerging Memory Elements Open access 13 November 2017 Pages: 1121 - 1143
Piecewise empirical model (PEM) of resistive memory for pulsed analog and neuromorphic applications
John Niroula
Sapan Agarwal
Matthew J. Marinella
S.I.: Computational Electronics of Emerging Memory Elements 02 December 2017 Pages: 1144 - 1153
Stochastic circuit breaker network model for bipolar resistance switching memories
S. Brivio
S. Spiga
S.I.: Computational Electronics of Emerging Memory Elements 29 August 2017 Pages: 1154 - 1166
Cross-point memory design challenges and survey of selector device characteristics
Xiaochen Peng
Ryan Madler
Shimeng Yu
S.I.: Computational Electronics of Emerging Memory Elements 31 August 2017 Pages: 1167 - 1174
Design rules for threshold switches based on a field triggered thermal runaway mechanism
Carsten Funck
Susanne Hoffmann-Eifert
Stephan Menzel
S.I.: Computational Electronics of Emerging Memory Elements 07 September 2017 Pages: 1175 - 1185
Memory selector devices and crossbar array design: a modeling-based assessment
An Chen
S.I. : Computational Electronics of Emerging Memory Elements 02 September 2017 Pages: 1186 - 1200
From materials to systems: a multiscale analysis of nanomagnetic switching
Yunkun Xie
Jianhua Ma
Avik W. Ghosh
S.I.: Computational Electronics of Emerging Memory Elements 06 September 2017 Pages: 1201 - 1226
Prediction of new metastable \(\hbox {HfO}_{2}\) phases: toward understanding ferro- and antiferroelectric films
S. V. Barabash
S.I.: Computational Electronics of Emerging Memory Elements Open access 13 November 2017 Pages: 1227 - 1235
A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device
Milan Pešić
Christopher Künneth
Stefan Slesazeck
S.I.: Computational Electronics of Emerging Memory Elements 31 August 2017 Pages: 1236 - 1256
Review of physics-based compact models for emerging nonvolatile memories
Nuo Xu
Pai-Yu Chen
Shimeng Yu
S.I. : Computational Electronics of Emerging Memory Elements 27 October 2017 Pages: 1257 - 1269

Volume 16, Issue 4

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