1. Editorial

   • Umberto Ravaioli

   Editorial Board Pages: 7 - 7

2. Eigenstate Selection in Open Quantum Dot Systems: On the True Nature of Level Broadening

   • R. Akis
   • D.K. Ferry
   • J.P. Bird

   OriginalPaper Pages: 9 - 15

3. On the Completeness of Quantum Hydrodynamics: Vortex Formation and the Need for Both Vector and Scalar Quantum Potentials in Device Simulation

   • John R. Barker

   OriginalPaper Pages: 17 - 21

4. On the Current and Density Representation of Many-Body Quantum Transport Theory

   • John R. Barker

   OriginalPaper Pages: 23 - 26

5. A Space Dependent Wigner Equation Including Phonon Interaction

   • M. Nedjalkov
   • H. Kosina
   • S. Selberherr

   OriginalPaper Pages: 27 - 31

6. RTD Relaxation Oscillations, the Time Dependent Wigner Equation and Phase Noise

   • H.L. Grubin
   • R.C. Buggeln

   OriginalPaper Pages: 33 - 37

7. Modeling of Shallow Quantum Point Contacts Defined on AlGaAs/GaAs Heterostructures: The Effect of Surface States

   • G. Fiori
   • G. Iannaccone
   • M. Macucci

   OriginalPaper Pages: 39 - 42

8. Study of Noise Properties in Nanoscale Electronic Devices Using Quantum Trajectories

   • Xavier Oriols
   • Ferran Martín
   • Jordi Suñé

   OriginalPaper Pages: 43 - 48

9. Monte-Carlo Simulation of Clocked and Non-Clocked QCA Architectures

   • L. Bonci
   • M. Gattobigio
   • M. Macucci

   OriginalPaper Pages: 49 - 53

10. A Wigner Function Based Ensemble Monte Carlo Approach for Accurate Incorporation of Quantum Effects in Device Simulation

    • L. Shifren
    • D.K. Ferry

    OriginalPaper Pages: 55 - 58

11. The Effective Potential in Device Modeling: The Good, the Bad and the Ugly

    • D.K. Ferry
    • S. Ramey
    • R. Akis

    OriginalPaper Pages: 59 - 65

12. Wigner Paths for Quantum Transport

    • Paolo Bordone
    • Carlo Jacoboni

    OriginalPaper Pages: 67 - 73

13. Parallelization of the Nanoelectronic Modeling Tool (NEMO 1-D) on a Beowulf Cluster

    • Gerhard Klimeck

    OriginalPaper Pages: 75 - 79

14. Towards Fully Quantum Mechanical 3D Device Simulations

    • M. Sabathil
    • S. Hackenbuchner
    • P. Vogl

    OriginalPaper Pages: 81 - 85

15. Simulation of Field Coupled Computing Architectures Based on Magnetic Dot Arrays

    • György Csaba
    • Wolfgang Porod

    OriginalPaper Pages: 87 - 91

16. Numerical Acceleration of Three-Dimensional Quantum Transport Method Using a Seven-Diagonal Pre-Conditioner

    • David Z.-Y. Ting
    • Ming Gu
    • Jianwen Cao

    OriginalPaper Pages: 93 - 97

17. Numerical Investigation of Shot Noise between the Ballistic and the Diffusive Regime

    • M. Macucci
    • G. Iannaccone
    • B. Pellegrini

    OriginalPaper Pages: 99 - 102

18. On Ohmic Boundary Conditions for Density-Gradient Theory

    • M.G. Ancona
    • D. Yergeau
    • B.A. Biegel

    OriginalPaper Pages: 103 - 107

19. Molecular Devices Simulations Based on Density Functional Tight-Binding

    • Aldo Di Carlo
    • Marieta Gheorghe
    • Thomas Frauenheim

    OriginalPaper Pages: 109 - 112

20. Role of Carrier Capture in Microscopic Simulation of Multi-Quantum-Well Semiconductor Laser Diodes

    • M.S. Hybertsen
    • B. Witzigmann
    • R.K. Smith

    OriginalPaper Pages: 113 - 118

21. Numerical Study of Minority Carrier Induced Diffusion Capacitance in VCSELs Using Minilase

    • Yang Liu
    • Fabiano Oyafuso
    • Karl Hess

    OriginalPaper Pages: 119 - 122

22. Quantum Transport Simulation of Carrier Capture and Transport within Tunnel Injection Lasers

    • Wanqiang Chen
    • Xin Zheng
    • Michael Stroscio

    OriginalPaper Pages: 123 - 127

23. Modeling of Semiconductor Optical Amplifiers

    • Andrea Reale
    • Paolo Lugli

    OriginalPaper Pages: 129 - 134

24. Hybrid LSDA/Diffusion Quantum Monte-Carlo Method for Spin Sequences in Vertical Quantum Dots

    • P. Matagne
    • T. Wilkens
    • R. Martin

    OriginalPaper Pages: 135 - 139

25. Theoretical Investigations of Spin Splittings and Optimization of the Rashba Coefficient in Asymmetric AlSb/InAs/GaSb Heterostructures

    • X. Cartoixà
    • D.Z.-Y. Ting
    • T.C. McGill

    OriginalPaper Pages: 141 - 146

26. Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures

    • D.Z.-Y. Ting
    • X. Cartoixà
    • J.N. Schulman

    OriginalPaper Pages: 147 - 151

27. Tunneling through Thin Oxides—New Insights from Microscopic Calculations

    • M. Städele
    • B. Tuttle
    • K. Hess

    OriginalPaper Pages: 153 - 159

28. Full Quantum Simulation of Silicon-on-Insulator Single-Electron Devices

    • Frederik Ole Heinz
    • Andreas Schenk
    • Wolfgang Fichtner

    OriginalPaper Pages: 161 - 164

29. A 3-D Atomistic Study of Archetypal Double Gate MOSFET Structures

    • Andrew R. Brown
    • Jeremy R. Watling
    • Asen Asenov

    OriginalPaper Pages: 165 - 169

30. 3-D Parallel Monte Carlo Simulation of Sub-0.1 Micron MOSFETs on a Cluster Based Supercomputer

    • Asim Kepkep
    • Umberto Ravaioli

    OriginalPaper Pages: 171 - 174

31. Hole Transport in Orthorhombically Strained Silicon

    • F.M. Bufler
    • W. Fichtner

    OriginalPaper Pages: 175 - 177

32. Empirical Pseudopotential Method for the Band Structure Calculation of Strained-Silicon Germanium Materials

    • Salvador Gonzalez
    • Dragica Vasileska
    • Alexander A. Demkov

    OriginalPaper Pages: 179 - 183

33. A Computational Exploration of Lateral Channel Engineering to Enhance MOSFET Performance

    • Jing Guo
    • Zhibin Ren
    • Mark Lundstrom

    OriginalPaper Pages: 185 - 189

34. Monte Carlo Simulations of Hole Dynamics in Si/SiGe Quantum Cascade Structures

    • Z. Ikonić
    • P. Harrison
    • R.W. Kelsall

    OriginalPaper Pages: 191 - 194

35. Calculation of Direct Tunneling Current through Ultra-Thin Gate Oxides Using Complex Band Models For SiO₂

    • Atsushi Sakai
    • Akihiro Ishida
    • Kenji Taniguchi

    OriginalPaper Pages: 195 - 199

36. Comparison of Quantum Corrections for Monte Carlo Simulation

    • Brian Winstead
    • Hideaki Tsuchiya
    • Umberto Ravaioli

    OriginalPaper Pages: 201 - 207

37. Monte Carlo Based Calculation of the Electron Dynamics in a Two-Dimensional GaN/AlGaN Heterostructure in the Presence of Strain Polarization Fields

    • Tsung-Hsing Yu
    • Kevin F. Brennan

    OriginalPaper Pages: 209 - 214

38. Parallel Approaches for Particle-Based Simulation of Charge Transport in Semiconductors

    • M. Saraniti
    • J. Tang
    • S. Wigger

    OriginalPaper Pages: 215 - 218

39. Full-Band Monte Carlo Simulation of Two-Dimensional Electron Gas in SOI MOSFETs

    • H. Takeda
    • N. Mori
    • C. Hamaguchi

    OriginalPaper Pages: 219 - 222

40. Band-to-Band Tunneling by Monte Carlo Simulation for Prediction of MOSFET Gate-Induced Drain Leakage Current

    • Edwin C. Kan
    • Venkat Narayanan
    • Gen Pei

    OriginalPaper Pages: 223 - 226

41. A Computational Technique for Electron Energy States Calculation in Nano-Scopic Three-Dimensional InAs/GaAs Semiconductor Quantum Rings Simulation

    • Yiming Li
    • O. Voskoboynikov
    • S.M. Sze

    OriginalPaper Pages: 227 - 230

42. Fully Numerical Monte Carlo Simulator for Noncubic Symmetry Semiconductors

    • Louis Tirino
    • Michael Weber
    • P. Paul Ruden

    OriginalPaper Pages: 231 - 234

43. Theoretical Study of RF Breakdown in GaN Wurtzite and Zincblende Phase MESFETs

    • M. Weber
    • L. Tirino
    • Maziar Farahmand

    OriginalPaper Pages: 235 - 239

44. Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas

    • Yang Chen
    • Di Li
    • Sanjay K. Banerjee

    OriginalPaper Pages: 241 - 245

45. An Analytical 1-D Model for Ion Implantation of Any Species into Single-Crystal Silicon Based on Legendre Polynomials

    • G. Shrivastav
    • D. Li
    • S.K. Banerjee

    OriginalPaper Pages: 247 - 250

46. On the Electron Transient Response in a 50 nm MOSFET by Ensemble Monte Carlo Simulation in Presence of the Smoothed Potential Algorithm

    • Gabriele Formicone
    • Marco Saraniti
    • David K. Ferry

    OriginalPaper Pages: 251 - 255

47. Quantum Corrections in the Monte Carlo Simulations of Scaled PHEMTs with Multiple Delta Doping

    • K. Kalna
    • A. Asenov

    OriginalPaper Pages: 257 - 261

48. Thermally Self-Consistent Monte Carlo Device Simulations

    • N.J. Pilgrim
    • W. Batty
    • R.W. Kelsall

    OriginalPaper Pages: 263 - 266

49. 3D Monte Carlo Modeling of Thin SOI MOSFETs Including the Effective Potential and Random Dopant Distribution

    • S.M. Ramey
    • D.K. Ferry

    OriginalPaper Pages: 267 - 271

50. Low-Field Mobility and Quantum Effects in Asymmetric Silicon-Based Field-Effect Devices

    • I. Knezevic
    • D. Vasileska
    • D.K. Ferry

    OriginalPaper Pages: 273 - 277