Abstract
We present a simulator for calculating, in a consistent manner, the realistic electronic structure of three-dimensional heterostructure quantum devices under bias and its current density close to equilibrium. The electronic structure is calculated fully quantum mechanically, whereas the current is determined by employing a semiclassical concept of local Fermi levels that are calculated self-consistently. We discuss the numerical techniques employed and present illustrative examples that are compared with quantum transport calculations. In addition, the simulator has been used successfully to study shape-dependent charge localization effects in self-assembled GaAs/InGaAs quantum dots.
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Sabathil, M., Hackenbuchner, S., Majewski, J. et al. Towards Fully Quantum Mechanical 3D Device Simulations. Journal of Computational Electronics 1, 81–85 (2002). https://doi.org/10.1023/A:1020719928653
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DOI: https://doi.org/10.1023/A:1020719928653