Abstract
A computationally-efficient 1-D analytical model for ion implantation of any species into single crystal silicon is presented. By interpolating between a few species, the model can predict as-implanted profiles for all the other species. The model uses Legendre polynomials as basis functions. The results of the model are in good agreement with UT-MARLOWE, which is a physically-based and experimentally verified Monte Carlo simulator.
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Balamurugan G., Obradovic B.J., Wang G., Chen Y., and Tasch A.F. 1998. New analytic models and efficient parameter extraction for computationally efficient 1-D and 2-D ion implantation modeling. International ElectronDevices MeetingTechnical Digest, pp. 517–520.
Chen Y. 2001. A universal model of ion implantation into topographically complex structures with multiple materials. Ph.D. Thesis, The University of Texas at Austin.
Morris S.J., Obradovic B.J., Yang S.-H., and Tasch A.F. 1996. Modeling of boron, phosphorus and arsenic implants into single crystal silicon over a wide energy range. International Electron Devices Meeting Technical Digest, pp. 721–724.
Tasch A.F., Yang S.-H., and Morris S.J. 1995. Modeling of ion implantation into single crystal silicon. Nuclear Instruments & Methods in Physics Research B 102: 173–179.
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Shrivastav, G., Li, D., Chen, Y. et al. An Analytical 1-D Model for Ion Implantation of Any Species into Single-Crystal Silicon Based on Legendre Polynomials. Journal of Computational Electronics 1, 247–250 (2002). https://doi.org/10.1023/A:1020741928169
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DOI: https://doi.org/10.1023/A:1020741928169