Abstract
We have developed a program for the simulation of devices defined by electrostatic confinement on the two-dimensional electron gas in AlGaAs/GaAs heterostructures. Our code is based on the self-consistent solution of the Poisson-Schrödinger equation in three dimensions, and can take into account the effects of surface states at the semiconductor-air interface and of discrete impurities in the doped layer. We show results from the simulation of quantum point contacts with different lithographic gaps, whose conductance is computed by means of a code based on the recursive Green's functions formalism.
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Fiori, G., Iannaccone, G. & Macucci, M. Modeling of Shallow Quantum Point Contacts Defined on AlGaAs/GaAs Heterostructures: The Effect of Surface States. Journal of Computational Electronics 1, 39–42 (2002). https://doi.org/10.1023/A:1020703425018
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DOI: https://doi.org/10.1023/A:1020703425018