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Full-Band Monte Carlo Simulation of Two-Dimensional Electron Gas in SOI MOSFETs

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Abstract

A full-band Monte Carlo simulation of two-dimensional electron gas is performed to study effects of the non-parabolicity of the energy band structure on the phonon-limited electron mobility in SOI MOSFETs with a thin Si-layer.

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References

  • Fisher B. and Hofmann K.R. 2000. Appl. Phys. Lett. 76: 583.

    Google Scholar 

  • Fischetti M.V. and Laux S.E. 1988. Phys. Rev. B 38: 9721.

    Google Scholar 

  • Fischett M.V. and Laux S.E. 1993. Phys. Rev. B 48: 2244.

    Google Scholar 

  • Takagi S., Koga J., and Toriumi A. 1998. Jpn. J. Appl. Phys. 37: 1289.

    Google Scholar 

  • Takeda H., Mori N., and Hamaguchi C. 2002. Physica B 314: 377.

    Google Scholar 

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Authors and Affiliations

  1. Department of Electronic Engineering, Osaka University, 2–1 Yamada-oka, Suita City, Osaka, 565-0871, Japan

    H. Takeda, N. Mori & C. Hamaguchi

Authors
  1. H. Takeda
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  2. N. Mori
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  3. C. Hamaguchi
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Correspondence to H. Takeda.

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Takeda, H., Mori, N. & Hamaguchi, C. Full-Band Monte Carlo Simulation of Two-Dimensional Electron Gas in SOI MOSFETs. Journal of Computational Electronics 1, 219–222 (2002). https://doi.org/10.1023/A:1020729625444

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  • DOI: https://doi.org/10.1023/A:1020729625444

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