Volume 15, Issue 4 | Journal of Computational Electronics

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Volume 15, Issue 4

December 2016

Special Issue on Inelastic Scattering

Issue Editors:

Marc Bescond,
Philippe Dollfus

49 articles in this issue

Introduction
Marc Bescond
Philippe Dollfus
EditorialNotes 07 October 2016 Pages: 1119 - 1122
Incoherent transport in NEMO5: realistic and efficient scattering on phonons
James Charles
Prasad Sarangapani
Gerhard Klimeck
OriginalPaper 17 June 2016 Pages: 1123 - 1129
Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
Antonio Martinez
Anna Price
John Barker
OriginalPaper Open access 21 July 2016 Pages: 1130 - 1147
Towards realistic time-resolved simulations of quantum devices
Joseph Weston
Xavier Waintal
OriginalPaper 11 July 2016 Pages: 1148 - 1157
Quantum dynamics of optical phonons generated by optical excitation of a quantum dot
Daniel Wigger
Helge Gehring
Tilmann Kuhn
OriginalPaper 11 July 2016 Pages: 1158 - 1169
Electron–phonon dissipation in quantum nanodevices
Rita Claudia Iotti
Fabrizio Dolcini
Fausto Rossi
OriginalPaper 21 July 2016 Pages: 1170 - 1178
Random phonon model of dissipative electron transport in nanowire MOSFETs
Gennady Mil’nikov
Nobuya Mori
OriginalPaper 19 July 2016 Pages: 1179 - 1191
Partially coherent electron transport in terahertz quantum cascade lasers based on a Markovian master equation for the density matrix
O. Jonasson
F. Karimi
I. Knezevic
OriginalPaper 01 August 2016 Pages: 1192 - 1205
Unphysical features in the application of the Boltzmann collision operator in the time-dependent modeling of quantum transport
Z. Zhan
E. Colomés
X. Oriols
OriginalPaper 10 August 2016 Pages: 1206 - 1218
The nonequilibrium Green’s function picture of inelastic processes in nanostructure photovoltaics
Urs Aeberhard
OriginalPaper 11 August 2016 Pages: 1219 - 1232
On the local approximation of the electron–photon interaction self-energy
Nicolas Cavassilas
Fabienne Michelini
Marc Bescond
OriginalPaper 19 August 2016 Pages: 1233 - 1239
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors
Marco G. Pala
Corentin Grillet
David Esseni
OriginalPaper 21 September 2016 Pages: 1240 - 1247
Atomistic tight-binding computations in the new class of CdSe/AlP II–VI core/III–V shell nanocrystals
Worasak Sukkabot
OriginalPaper 13 September 2016 Pages: 1248 - 1254
First-principle calculations of electronic and ferromagnetic properties of \(\hbox {Al}_{1-x}\hbox {V}_{x}\hbox {Sb}\)
Asmaa Zerouali
Allel Mokaddem
Abdelkader Tadjer
OriginalPaper 12 October 2016 Pages: 1255 - 1262
Electronic properties of graphyne nanotubes filled with small fullerenes: a density functional theory study
Roya Majidi
OriginalPaper 24 October 2016 Pages: 1263 - 1268
Numerical analysis of transmission coefficient, LDOS, and DOS in superlattice nanostructures of cubic \(\hbox {Al}_{x}\hbox {Ga}_{1-x}\hbox {N/GaN}\) resonant tunneling MODFETs
D. Bouguenna
T. Wecker
A. Beloufa
OriginalPaper 25 August 2016 Pages: 1269 - 1274
Simulation of dielectric behavior in RFeO\(_{3}\) orthoferrite ceramics (R = rare earth metals)
Hamid Ghayour
Majid Abdellahi
Amirsalar Khandan
OriginalPaper 25 August 2016 Pages: 1275 - 1283
Negative differential resistance effect in similar right triangle graphene devices
Lihua Wang
Zizhen Zhang
Yong Guo
OriginalPaper 04 August 2016 Pages: 1284 - 1290
20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications
J. Ajayan
D. Nirmal
OriginalPaper 16 August 2016 Pages: 1291 - 1296
Asymmetric junctionless nanowire TFET with built-in \({n}^{+}\) source pocket emphasizing on energy band modification
Morteza Rahimian
Morteza Fathipour
OriginalPaper 16 September 2016 Pages: 1297 - 1307
Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs
Rechem Djamil
Khial Aicha
Fayçal Djeffal
OriginalPaper 04 October 2016 Pages: 1308 - 1315
A two-dimensional (2D) analytical surface potential and subthreshold current model for the underlap dual-material double-gate (DMDG) FinFET
Vadthiya Narendar
Saurabh Rai
Siddharth Tiwari
OriginalPaper 04 November 2016 Pages: 1316 - 1325
Extensive electrostatic investigation of workfunction-modulated SOI tunnel FETs
Subhrasmita Panda
Sidhartha Dash
Guru Prasad Mishra
OriginalPaper 04 October 2016 Pages: 1326 - 1333
Design optimization of a high-breakdown-voltage GaN-based vertical HFET with composite current-blocking layer
Jiangfeng Du
Dong Liu
Qi Yu
OriginalPaper 07 October 2016 Pages: 1334 - 1339
High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics
Slah Hlali
Neila Hizem
Adel Kalboussi
OriginalPaper 08 November 2016 Pages: 1340 - 1350
Analysis of co-tunneling effect in single-electronics simulation
Ali A. Elabd
EL-Sayed M. EL-Rabaie
Abdelaziz T. Shalaby
OriginalPaper 03 November 2016 Pages: 1351 - 1360
Negative differential resistance in new structures based on graphene nanoribbons
M. Sharifi
E. Akhoundi
H. Esmaili
OriginalPaper 05 November 2016 Pages: 1361 - 1369
Self-consistent quantum drift-diffusion model for multiple quantum well IMPATT diodes
Monisha Ghosh
Somrita Ghosh
Aritra Acharyya
OriginalPaper 30 August 2016 Pages: 1370 - 1387
Behavior of the dielectric function of monolayer \(\hbox {MoS}_{2}\) under Uniaxial Strain
Maryam Nayeri
Morteza Fathipour
Arash Yazdanpanah Goharrizi
OriginalPaper 03 September 2016 Pages: 1388 - 1392
Basis adaptation for the stochastic nonlinear Poisson–Boltzmann equation
Amirreza Khodadadian
Clemens Heitzinger
OriginalPaper 17 October 2016 Pages: 1393 - 1406
H\({^{+}}\)-ion-sensitive FET macromodel in LTSPICE IV
Nur Liyana Mardhiah Abu Samah
Khuan Y. Lee
Roziah Jarmin
OriginalPaper 27 October 2016 Pages: 1407 - 1415
Design and modeling of molecular logic circuits based on transistor structures
S. Safapour
R. Sabbaghi-Nadooshan
A. A. Shokri
OriginalPaper 02 November 2016 Pages: 1416 - 1423
Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations
Zia Abbas
Mauro Olivieri
Andreas Ripp
OriginalPaper 02 August 2016 Pages: 1424 - 1439
A new DVCC-based fully cascadable voltage-mode full-wave rectifier
Muhammed A. Ibrahim
Erkan Yuce
Shahram Minaei
OriginalPaper 24 August 2016 Pages: 1440 - 1449
Design of all-optical universal shift register using nonlinear microring resonators
Jayanta Kumar Rakshit
Jitendra Nath Roy
OriginalPaper 10 September 2016 Pages: 1450 - 1461
Fabrication parameters affecting implementation of waveguide bandpass filter with complementary split-ring resonators
Snežana Lj. Stefanovski Pajović
Milka M. Potrebić
Zlata Ž. Cvetković
OriginalPaper 24 October 2016 Pages: 1462 - 1472
Reconfiguration of optical logics gates at 160 Gb/s based on SOA-MZI
Lovkesh
Anupma Marwaha
OriginalPaper 27 October 2016 Pages: 1473 - 1483
Design and analysis of new fault-tolerant majority gate for quantum-dot cellular automata
Huakun Du
Hongjun Lv
Guangjun Xie
OriginalPaper 25 October 2016 Pages: 1484 - 1497
Design guidelines for a metallization scheme with multiple-emitter contact lines in BC-BJ solar cells
Marco Guevara
Paul Procel
Marco Lanuzza
OriginalPaper 03 September 2016 Pages: 1498 - 1504
Efficient numerical procedure for the determination of the wave function-independent terms in longitudinal optical phonon scattering rates formulated in the Fourier domain
X. Lü
L. Schrottke
H. T. Grahn
OriginalPaper 16 September 2016 Pages: 1505 - 1510
Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model
P. Prajoon
D. Nirmal
J. Charles Pravin
OriginalPaper 28 September 2016 Pages: 1511 - 1520
Theoretical investigation of the electronic structure and optical properties of zinc-doped magnesium oxide
Jia Wang
Yan Tu
Harm Tolner
OriginalPaper Open access 08 October 2016 Pages: 1521 - 1530
Fully self-consistent analysis of III-nitride quantum cascade structures
Sumit Saha
Jitendra Kumar
OriginalPaper 03 October 2016 Pages: 1531 - 1540
Numerical modeling of thermal behavior and structural optimization of a-Si:H solar cells at high temperatures
Jabbar Ganji
Abdolnabi Kosarian
Hooman Kaabi
OriginalPaper 18 October 2016 Pages: 1541 - 1553
Self-consistent device simulation of a-Si p–i–n solar cells and energy resolution analyses of capture and emission processes
Azuma Suzuki
Katsuhisa Yoshida
Nobuyuki Sano
OriginalPaper 08 October 2016 Pages: 1554 - 1562
Underlap channel silicon-on-insulator quantum dot floating-gate MOSFET for low-power memory applications
Chetan T. Dabhi
Ganesh C. Patil
OriginalPaper 31 August 2016 Pages: 1563 - 1569
Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
Jun-seop An
Chul-min Choi
Yun-heub Song
OriginalPaper 21 October 2016 Pages: 1570 - 1576
Design and simulation of a semispherical semiconductor to construct a beta-voltaic battery using c-Si and a-Si:H materials with different doping concentration
H. Sadeghi
S. M. Mostajabodavati
D. Rahi
OriginalPaper 20 September 2016 Pages: 1577 - 1592
Structural dependence of the transferred charge density in triboelectric nanogenerators: analytical and numerical study
SeongMin Kim
Jaewook Ha
Jin-Baek Kim
OriginalPaper 05 August 2016 Pages: 1593 - 1597