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Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors

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Abstract

We study the impact of electron–phonon interaction on the subthreshold operation region of Tunnel-FETs by means of full-quantum simulations. Our approach is based on the nonequilibrium Green’s function method, where acoustic and optical phonon scatterings are taken into account through the self-consistent Born approximation. Two device architectures are analyzed: InAs nanowire longitudinal Tunnel-FETs, and 2D vertical Tunnel-FETs based on either an GaSb/AlSb/InAs heterostructure or a MoS\(_2\)/WTe\(_2\) van der Waals heterojunction. In InAs nanowire Tunnel-FETs with interface traps, electron–phonon interaction deteriorates the subthreshold swing by allowing trap-assisted tunneling at energies higher than the valence-band edge in the source. In vertical heterojunction Tunnel-FETs, optical phonon scattering increases the OFF current by inducing inelastic transition in the overlap region even in the absence of traps.

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Acknowledgments

This work was supported by the French ANR through the project No. ANR-13-NANO-0009-01 (“NOODLES”).

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Authors and Affiliations

  1. IMEP-LAHC, Université Grenoble Alpes, 38000, Grenoble, France

    Marco G. Pala, Corentin Grillet, Jiang Cao, Demetrio Logoteta & Alessandro Cresti

  2. IMEP-LAHC, CNRS, 38000, Grenoble, France

    Marco G. Pala, Corentin Grillet, Jiang Cao, Demetrio Logoteta & Alessandro Cresti

  3. DPIA, Via delle Scienze 206, 33100, Udine, Italy

    David Esseni

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  1. Marco G. Pala
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Correspondence to Marco G. Pala.

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Pala, M.G., Grillet, C., Cao, J. et al. Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors. J Comput Electron 15, 1240–1247 (2016). https://doi.org/10.1007/s10825-016-0900-8

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