Abstract
This work proposes a GaN-based vertical heterostructure field-effect transistor with composite insulated current-blocking layer (GaN CCBL-VHFET) to improve the breakdown voltage (BV) of the current aperture vertical electron transistor (CAVET) and obtain high CBL performance. When utilizing a composite current-blocking layer, the electric field (E-field) discontinuity at the CBL/low-k dielectric interface results in a more uniform E-field distribution along the GaN buffer layer, significantly improving the BV. Simulation results show that the BV and ON-resistance (\(R_{\mathrm{ON}}\)) of the device with two low-k dielectric layers are 1744 V and 0.91 m\(\Omega \,\mathrm{cm}^{2}\), respectively. Furthermore, the average breakdown E-field is extremely high, reaching 291 V/\({\upmu }\)m. Compared with the conventional GaN CAVET, the BV of the GaN CCBL-VHFET increases by about 94 % while retaining low \(R_{\mathrm{ON}}\). Furthermore, the challenge of activating Mg in the CBL is avoided for this device structure.
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This study was financially supported by the National Natural Science Foundation of China under project no. 61376078.
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Du, J., Liu, D., Bai, Z. et al. Design optimization of a high-breakdown-voltage GaN-based vertical HFET with composite current-blocking layer. J Comput Electron 15, 1334–1339 (2016). https://doi.org/10.1007/s10825-016-0908-0
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DOI: https://doi.org/10.1007/s10825-016-0908-0