Abstract
Some developments in applications of Mössbauer spectroscopy to investigate ion-implanted radioactive source isotopes in solids are presented. Emphasis is layed on impurity and defect studies in metals and semiconductors. The particular role of Mössbauer spectroscopy in comparison to and in combination with other analytical techniques is illustrated. Recently developed on-line implantation techniques are described, their merits and prospects are discussed.
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Weyer, G. Ion implantation. Hyperfine Interact 27, 249–262 (1986). https://doi.org/10.1007/BF02354759
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DOI: https://doi.org/10.1007/BF02354759