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Mössbauer spectroscopy of implanted sources

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Abstract

A review is given of the field of Mössbauer spectroscopy of ion-implanted sources. After an introduction to the various aspects of the ion-implantation method, the following topics are treated: final site selection of implanted impurities; trapping of defects at implanted ions; on-line implantation; implantation in metals, semiconductors and insulators.

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  1. Laboratorium voor Algemene Natuurkunde, Materials Science Centre, Westersingel 34, 9718 CM, Groningen, The Netherlands

    L. Niesen

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Niesen, L. Mössbauer spectroscopy of implanted sources. Hyperfine Interact 13, 65–88 (1983). https://doi.org/10.1007/BF01027246

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