Abstract
The lattice vibrations of the two constituent atoms in the III–V semiconductors GaP, GaAs, GaSb, InP, InAs, and InSb have been studied experimentally by neutron diffraction and theoretically by calculations within the framework of various phonon models proposed in the literature for these compounds. The mean-square amplitudes (measured at 295 K) show a general increase with increasing lattice constant and seem furthermore to reflect the partial ionicity of the compounds. The different phonon models for the lattice dynamics are compared with each other and tested critically against the experimental data. Several models are found to be insufficient. The most satisfactory ones are some shell models.
119Sn Mössbauer impurity atoms have been implanted site-selectively on the two different substitutional lattice sites and their Debye temperatures have been determined. A rigorous result relating Debye temperatures of host and impurity atoms permits a simplified interpretation of the experimental results in terms of “Einstein-Debye force constants”. Both lower and higher force constants are deduced for the impurities as compared with the host atoms. Larger force constants are found on V sites than on the III sites for Sn in the Ga compounds, whereas the opposite holds in the In compounds. Further details can be obtained in an extended version of this paper available from the authors.
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Nielsen, O.H., Larsen, F.K., Damgaard, S. et al. Systematic experimental and theoretical studies of the lattice vibrations of host atoms and substitutional Sn impurities in III–V semiconductors. Z. Physik B - Condensed Matter 52, 99–109 (1983). https://doi.org/10.1007/BF01445290
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DOI: https://doi.org/10.1007/BF01445290