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Sn-vacancy defects in GaP

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Abstract

Complex119Sn-vacancy defects in GaP have been studied by Mössbauer-emission spectroscopy on the 24-keV γ radiation of119Sn. The defects were created by ion implantations of radioactive119In+ and119Sb+, which in their decays both populate the Mössbauer state of119Sn. The radiogenic119Sn-vacancy defects are proposed to consist of substitutional119Sn on Ga or P sites, respectively, associated with (P or Ga) vacancies.

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Authors and Affiliations

  1. Institute of Physics, University of Aarhus, DK-8000, Aarhus C, Denmark

    G. Weyer, J. W. Petersen & S. Damgaard

  2. ISOLDE Collaboration, CERN, CH-1211, Geneva, Switzerland

    G. Weyer, J. W. Petersen & S. Damgaard

Authors
  1. G. Weyer
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  2. J. W. Petersen
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  3. S. Damgaard
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Weyer, G., Petersen, J.W. & Damgaard, S. Sn-vacancy defects in GaP. Hyperfine Interact 15, 495–498 (1983). https://doi.org/10.1007/BF02159799

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  • DOI: https://doi.org/10.1007/BF02159799

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