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Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis

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Abstract

We review the synthesis methods, crystal parameters, and band structure of two-dimensional and quasi-two-dimensional materials, including graphene; group IV‒VIII transition metal dichalcogenides; 2D binary chalcogenides \({{{\text{A}}}^{{{\text{IV}}}}}{{{\text{B}}}^{{{\text{VI}}}}}\), \({\text{A}}_{m}^{{{\text{IV}}}}{\text{B}}_{n}^{{{\text{VI}}}}\), \({{{\text{A}}}^{{{\text{III}}}}}{{{\text{B}}}^{{{\text{VI}}}}}\), \({\text{A}}_{m}^{{{\text{III}}}}{\text{B}}_{n}^{{{\text{VI}}}}\), and \({{{\text{A}}}^{{{\text{II}}}}}{{{\text{B}}}^{{{\text{VI}}}}}\) of group IV, III, and II transition metals; Ti, Zr, Hf, Bi, and Sb trichalcogenides; \({{{\text{A}}}^{{\text{V}}}}{{{\text{B}}}^{{\text{V}}}}\) (AsN, AsP, PN, SbAs, SbN, SbP) 2D materials; \({{{\text{A}}}^{{{\text{III}}}}}{\text{N}}\) (A = Al, Ga, In, B) 2D nitrides; monoatomic 2D materials (phosphorene P, plumbene Pb, stanene Sn, germanene Ge, silicene Si, antimonene Sb, arsenene As, bismuthene Bi, borophene B, and octo-nitrogene 8‑N); functionalized graphene and silicon carbide SiC; CO, GeO, and SnO 2D oxides; 2D transitional metal dioxides, Ge, and Sn; 2D trioxides MoO3 and WO3; and transition metal di- and trihalides.

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Notes

  1. HOPG is the form of graphite with an angular deviation of the с axis from the normal to the basal plane by less than 1 angular degree, which is obtained from gaseous hydrocarbons (e.g., methane) at a temperature of 1400–1500°С with subsequent heating of the obtained pyrocarbon in vacuum to a temperature of 3000°С under a pressure of 50 MPa.

  2. The chemical methods for obtaining graphene in the form of aqueous and organic solutions and dispersions from oxides and intercalated graphite compounds, including those with the use of polymers, biomolecules, surfactants, as well as chemical reactions with the possible participation of the graphene surfaces were reviewed in [8].

  3. QFEG (quasi-free-standing graphene) is graphene grown on one of the Pt, Ir, or Cu substrates, which weakly interact with them and is characterized by the linear dispersion of the energy of π electrons near the Dirac points.

  4. The TiS3 synthesis temperature should be no higher than 630°С, since, at a temperature of 632°С, titanium trichalcogenide decomposes into TiS2 and sulfur.

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Funding

The reported study was funded by Russian Foundation for Basic Research according to the research project no. 18-29-20080.

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Authors and Affiliations

  1. Enterprise “RD&P Center “Orion”, Russian Federation State Research Center, 111538, Moscow, Russia

    V. P. Ponomarenko, V. S. Popov & E. L. Chepurnov

  2. Moscow Institute of Physics and Technology, 141701, Dolgoprudny, Moscow oblast, Russia

    V. P. Ponomarenko

  3. Shvabe JSC, 129366, Moscow, Russia

    S. V. Popov

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  1. V. P. Ponomarenko
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Ponomarenko, V.P., Popov, V.S., Popov, S.V. et al. Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis. J. Commun. Technol. Electron. 65, 1062–1104 (2020). https://doi.org/10.1134/S1064226920090090

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