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Chemical vapor deposition growth of monolayer MoSe2 nanosheets

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Abstract

The synthesis of two-dimensional (2D) layered materials with controllable thickness is of considerable interest for diverse applications. Here we report the first chemical vapor deposition growth of single- and few-layer MoSe2 nanosheets. By using Se and MoO3 as the chemical vapor supply, we demonstrate that highly crystalline MoSe2 can be directly grown on the 300 nm SiO2/Si substrates to form optically distinguishable single- and multi-layer nanosheets, typically in triangular shaped domains with edge lengths around 30 μm, which can merge into continuous thin films upon further growth. Micro-Raman spectroscopy and imaging was used to probe the thickness-dependent vibrational properties. Photoluminescence spectroscopy demonstrates that MoSe2 monolayers exhibit strong near band edge emission at 1.55 eV, while bilayers or multi-layers exhibit much weaker emission, indicating of the transition to a direct band gap semiconductor as the thickness is reduced to a monolayer.

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Authors and Affiliations

  1. Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, 90095, USA

    Jonathan C. Shaw, Hailong Zhou & Xiangfeng Duan

  2. Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA

    Yu Chen, Nathan O. Weiss, Yuan Liu & Yu Huang

  3. California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA

    Yu Huang & Xiangfeng Duan

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  1. Jonathan C. Shaw
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  2. Hailong Zhou
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  3. Yu Chen
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  5. Yuan Liu
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Correspondence to Xiangfeng Duan.

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Shaw, J.C., Zhou, H., Chen, Y. et al. Chemical vapor deposition growth of monolayer MoSe2 nanosheets. Nano Res. 7, 511–517 (2014). https://doi.org/10.1007/s12274-014-0417-z

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