Abstract
The concentration dependences of the charge-carrier mobility are obtained for the Δ1 model of the conduction band of n-Ge crystals on the basis of anisotropic scattering at 77 K. It is shown that the absolute-minimum inversion of the L 1-Δ1 type caused by single-axis pressure on n-Ge crystals along the [100] crystallographic direction substantially decreases the charge-carrier mobility. This is explained by a decrease in the relaxation time because the effective electron masses differ only slightly in terms of different minima. For the other two cases of inversion of the L 1-Δ1 absolute minimum under hydrostatic and single-axis pressure along the [110] crystallographic direction, a decrease in the electron mobility is caused mainly by an increase in the effective mass. It is shown also that it is the degree of effective-mass anisotropy that substantially affects the efficiency of charge-carrier scattering in anisotropic semiconductors in this case.
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Original Russian Text © S.V. Luniov, P.F. Nazarchuk, O.V. Burban, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 4, pp. 454–457.
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Luniov, S.V., Nazarchuk, P.F. & Burban, O.V. Calculation of the electron mobility for the Δ1 model of the conduction band of germanium single crystals. Semiconductors 48, 438–441 (2014). https://doi.org/10.1134/S1063782614040198
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DOI: https://doi.org/10.1134/S1063782614040198