Abstract
The intrinsic carrier concentration in silicon at T = 300 K is recalibrated in presence of degenerate doping considering Phosphorous as a dopant, including the previously omitted incomplete ionization for degenerate doping and incomplete ionization inducedprecisely evaluated band gap narrowing. Two readily calculable analytical equations format of exact Fermi–Dirac integral are used for accurately calculating majority free carrier density and position of Fermi energy level with respect to conduction band energy in n-type silicon. This paper brings forth the existing inaccuracies of previously published papers where the precise computation of ionization of dopants in determination of band gap narrowing parameters ΔEc and ΔEv has not been taken into account when the doping concentration enters degenerate regime.
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Ashraf, N.S. Recalculation of Intrinsic Carrier Concentration in Silicon at T = 300 K in Presence of Degenerate Doping. Silicon 16, 435–439 (2024). https://doi.org/10.1007/s12633-023-02674-2
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DOI: https://doi.org/10.1007/s12633-023-02674-2