Skip to main content
SpringerLink
Log in

Electron microscopy characterization of higher manganese silicide film structure on silicon

  • Published:
Nanotechnologies in Russia Aims and scope Submit manuscript

Abstract

The structure and composition of higher manganese silicide (HMS) films on Si(111) substrate are studied by high-resolution transmission electron microscopy, electron diffraction, and energy-dispersive X-ray spectroscopy. The formation of Mn4Si7 HMS film by the deposition of the gas-phase manganese onto silicon at 1040°C is observed. The film/substrate interface is semicoherent and does not contain any intermediate layer. The interface structure is refined by computer simulation. The orientation relationship \(\left( {\overline 1 \overline 2 4} \right)\left[ {443} \right]M{n_4}S{i_7}||\left( {1\overline 1 \overline 1 } \right)\left[ {001} \right]Si\) between the film and substrate is determined.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov, I. V. Ernst, and V. K. Zaitsev, Electrical and Photoelectrical Properties of Heterophase Structures Based on Silicon and Manganese Silicide (MERIYUS, Tashkent, 2014) [in Russian].

    Google Scholar 

  2. C. A. Nolph, E. Vescovo, and P. Reinke, Appl. Surf. Sci. 255, 7642 (2009).

    Article  Google Scholar 

  3. U. Gottlieb, A. Sulpice, B. Lambert-Andron, and O. Laborde, J. Alloys Comp. 361, 13 (2003). ICSD #97393

    Article  Google Scholar 

  4. O. Schwomma, A. Presinger, H. Nowotny, and A. Wittmann, Monatsh. Chem. 95, 1527 (1964). ICSD #43280

    Article  Google Scholar 

  5. H. W. Knott, M. H. Muller, and L. Heaton, Acta Crystallogr. 23, 549 (1967). ICSD #15339

    Article  Google Scholar 

  6. G. Zwilling and H. Nowotny, Monatsh. Chem. 104, 668 (1973). ICSD #23789

    Article  Google Scholar 

  7. L. I. Petrova, M. I. Fedorov, V. K. Zaitsev, and A. E. Engalychev, Inorg. Mater. 49, 355 (2013).

    Article  Google Scholar 

  8. L. M. Levinson, J. Solid State Chem. 6, 126 (1973).

    Article  Google Scholar 

  9. S. Teichert, S. Schwendler, D. K. Sarkar, A. Mogilatenko, M. Falke, G. Beddies, and H. J. Hinneberg, J. Cryst. Growth 227, 882 (2001).

    Article  Google Scholar 

  10. A. Mogilatenko, M. Falke, S. Teichert, S. Schwendler, D. K. Sarkar, and H. Hinneberg, Microelectron. Eng. 60, 247 (2002).—

    Article  Google Scholar 

  11. M. Kohira, Y. Souno, T. Matsuyama, H. Tatsuoka, I. J. Ohsugi, I. A. Nishida, and H. Kuwabara, Appl. Surf. Sci. 216, 614 (2003).

    Article  Google Scholar 

  12. V. V. Klechkovskaya, T. S. Kamilov, S. I. Adasheva, S. S. Khudaiberdyev, and V. I. Muratova, Crystallogr. Rep. 39, 815 (1994).

    Google Scholar 

  13. T. S. Kamilov, D. K. Kabilov, I. S. Samiev, Kh. Kh. Khusnutdinova, R. A. Muminov, and V. V. Klechkovskaya, Tech. Phys. 50, 1102 (2005).

    Article  Google Scholar 

  14. P. Stadelmann, The Java Electron Microscopy Software JEMS (2012). http://cimewww.epfl.ch.

    Google Scholar 

  15. M. Volmer and A. Weber, Z. Phys. Chem. 119, 277 (1926).

    Google Scholar 

  16. S. N. Kukushkin and A. V. Osipov, Phys. Usp. 41, 983 (1998).

    Article  Google Scholar 

  17. Z. Wang, Y. Wu, and Y. He, Int. J. Mod. Phys. B 18 (1), 87 (2004).

    Article  Google Scholar 

  18. E. I. Suvorova and V. V. Klechkovskaya, Crystallogr. Rep. 58, 854 (2013).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics,”, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia

    Andrey S. Orekhov, Anton S. Orekhov, N. A. Arkharova, E. V. Rakova & V. V. Klechkovskaya

  2. National Research Center “Kurchatov Institute,”, pl. Akademika Kurchatova 1, Moscow, 123182, Russia

    Andrey S. Orekhov & Anton S. Orekhov

  3. Tashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Uzbekistan

    T. S. Kamilov

Authors
  1. Andrey S. Orekhov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. S. Kamilov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Anton S. Orekhov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. N. A. Arkharova
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. E. V. Rakova
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. V. V. Klechkovskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Andrey S. Orekhov.

Additional information

Original Russian Text © Andrey S. Orekhov, T.S. Kamilov, Anton S. Orekhov, N.A. Arkharova, E.V. Rakova, V.V. Klechkovskaya, 2016, published in Rossiiskie Nanotekhnologii, 2016, Vol. 11, Nos. 9–10.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Orekhov, A.S., Kamilov, T.S., Orekhov, A.S. et al. Electron microscopy characterization of higher manganese silicide film structure on silicon. Nanotechnol Russia 11, 610–616 (2016). https://doi.org/10.1134/S1995078016050128

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1995078016050128

Search

Navigation