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AlGaN/GaN MOSHFET power switching transistor with embedded fast recovery diode

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Abstract

In this study, a novel AlGaN/GaN power-switching device is proposed for use in high-efficiency DC-DC converters. The proposed structure is composed of a normally-off AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) and an embedded freewheeling Schottky barrier diode (SBD). The effects of the embedded freewheeling SBD on conversion efficiency were investigated based on circuit simulation of DCDC synchronous buck converters. The SBD embedment not only reduces the chip size and cost, but also improves the power conversion efficiency at high operation frequencies, due to the reduced off-state power loss.

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Authors and Affiliations

  1. School of Electronic and Electrical Engineering, Hongik University, Seoul, 121-791, Korea

    Jung-Yeon Lee, Bong-Ryeol Park, Hyungtak Kim & Ho-Young Cha

  2. KEPCO Research Institute, Daejeon, 305-760, Korea

    Jaehan Kim

Authors
  1. Jung-Yeon Lee
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  2. Bong-Ryeol Park
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  3. Hyungtak Kim
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  4. Jaehan Kim
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  5. Ho-Young Cha
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Correspondence to Ho-Young Cha.

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Lee, JY., Park, BR., Kim, H. et al. AlGaN/GaN MOSHFET power switching transistor with embedded fast recovery diode. Electron. Mater. Lett. 10, 1115–1120 (2014). https://doi.org/10.1007/s13391-014-4128-0

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  • DOI: https://doi.org/10.1007/s13391-014-4128-0

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