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Applications of Emerging Materials: High Power Devices

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Abstract

SiC power MOSFETs, AlGaN/GaN-HEMTs (High Electron Mobility Transistors), AlGaN/GaN-MOSHEMTs and β-Ga2O3 MOSFETs have become the most attractive transistors for future high power electronic applications due to their unique characteristics like very low RON (ON Resistance), excellent mobility of electrons in the channel, outstanding breakdown performance and high temperature operation. This chapter highlights the various architectures and RF & power performance of SiC power MOSFETs, AlGaN/GaN-HEMTs (High Electron Mobility Transistors), AlGaN/GaN-MOSHEMTs and β-Ga2O3 MOSFETs. Moreover, it also describes the emergence of new materials for the development of above mentioned emerging transistors. This chapter also throw lights on the use of AlGaN as a channel layer material in AlGaN/GaN-HEMTs, ITO (Indium tin oxide) as a transparent gate electrode material in p-GaN/AlGaN-HEMTs, Gd2O3 as a high-k gate oxide material in AlGaN/GaN-HEMTs and also ScAlN as a barrier layer material in AlGaN/GaN-HEMTs.

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  1. Department of Electronics and Communication Engineering, SR University, Warangal, Telangana, India

    J. Ajayan, Shubham Tayal & Laxman Raju Thoutam

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  1. SR University, Warangal, India

    Laxman Raju Thoutam

  2. SR University, Warangal, India

    Shubham Tayal

  3. SR University, Warangal, India

    J. Ajayan

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Ajayan, J., Tayal, S., Thoutam, L.R. (2022). Applications of Emerging Materials: High Power Devices. In: Thoutam, L.R., Tayal, S., Ajayan, J. (eds) Emerging Materials. Springer, Singapore. https://doi.org/10.1007/978-981-19-1312-9_11

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