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Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)

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Abstract

This paper presents a systematic study of Al0.23Ga0.77N/GaN/AlxGa1−xN double-heterojunction high-electron-mobility transistors (DH-HEMTs) with a boron-doped P+ GaN cap layer under the gate. The boron-doped GaN cap layer shows great potential to form a high-bandgap Schottky gate in DH-HEMT devices to increase the resistivity of the GaN cap with excellent structural characteristics. Thus, the polarization-induced field in the GaN cap layer can be used to raise the conductive band of the device in the normally OFF operation. In this paper, these AlGaN/GaN power-switching devices with freewheeling Schottky barrier diodes are examined in their working states. In comparison with conventional HEMT power devices, the HEMT with a B-doped GaN cap offers the lowest switching charges, area-specific ON-state resistance, and energy losses. Therefore, this study clearly shows the advantage of GaN transistors for power electronics applications.

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Authors and Affiliations

  1. S.K.P Engineering College, Tiruvannamalai, India

    Baskaran Subramanian

  2. Karpagam College of Engineering, Coimbatore, India

    Mohanbabu Anandan, Saminathan Veerappan, Praveen Pechimuthu, Subash Navaneethan Vivekanandhan & Elamurugan Raju

  3. Anil Neerukonda Institute of Technology and Sciences, Visakhapatnam, India

    Murugapandiyan Panneerselvam

  4. Lovely Professional University, Jalandar, India

    Mohammed Wasim

  5. Bannari Amman Institute of Technology, Sathyamangalam, India

    Saravana Kumar Radhakrishnan

  6. Motilal Nehru National Institute of Technology, Allahabad, UP, India

    Yogesh Kumar Verma

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  1. Baskaran Subramanian
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Subramanian, B., Anandan, M., Veerappan, S. et al. Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD). J. Electron. Mater. 49, 4091–4099 (2020). https://doi.org/10.1007/s11664-020-08113-x

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