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Electrical characteristics of TMAH-surface treated Ni/Au/Al2O3/GaN MIS Schottky structures

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Abstract

The electrical characteristics and reverse leakage mechanisms of tetramethylammonium hydroxide (TMAH) surface-treated Ni/Au/Al2O3/GaN metal-insulator-semiconductor (MIS) diodes were investigated by using the current-voltage (I–V) and capacitance-voltage (C–V) characteristics. The MIS diode was formed on n-GaN after etching the AlGaN in the AlGaN/GaN heterostructures. The TMAH-treated MIS diode showed better Schottky characteristics with a lower ideality factor, higher barrier height and lower reverse leakage current compared to the TMAH-free MIS diode. In addition, the TMAH-free MIS diodes exhibited a transition from Poole-Frenkel emission at low voltages to Schottky emission at high voltages, whereas the TMAH-treated MIS diodes showed Schottky emission over the entire voltage range. Reasonable mechanisms for the improved device-performance characteristics in the TMAH-treated MIS diode are discussed in terms of the decreased interface state density or traps associated with an oxide material and the reduced tunneling probability.

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Authors and Affiliations

  1. Department of Electronic Engineering, LED-IT Fusion Technology Research Center (LIFTRC), Yeungnam University, Gyeongbuk, 712-749, Korea

    M. Siva Pratap Reddy & Ja-Soon Jang

  2. School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu, 702-701, Korea

    Jung-Hee Lee

Authors
  1. M. Siva Pratap Reddy
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  2. Jung-Hee Lee
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  3. Ja-Soon Jang
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Correspondence to Jung-Hee Lee or Ja-Soon Jang.

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Reddy, M.S.P., Lee, JH. & Jang, JS. Electrical characteristics of TMAH-surface treated Ni/Au/Al2O3/GaN MIS Schottky structures. Electron. Mater. Lett. 10, 411–416 (2014). https://doi.org/10.1007/s13391-014-3356-7

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  • DOI: https://doi.org/10.1007/s13391-014-3356-7

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