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Comparative Study of Analog Parameters for Various Silicon-Based Tunnel Field-Effect Transistors

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Abstract

In this ultramodern scenario, low power, less cost and reduced storage devices are in great demand. Because the majority devices operate on a remote power supply, low-power memories are enticing the unified VLSI industry. For reduced power consumption, high energy efficiency circuit, TFET is a feasible alternate to MOSFET as it is a p-type, intrinsic, n-type (p-i-n) diode whose tunnel current drifts amidst of the bands of channel and source having a minimum leakage current and reduced sub-threshold slope (SS). The sole difference between TFET and MOSFET is the switching mechanism: TFETs use band-to-band tunnelling (BTBT), while MOSFETs use thermionic emission. In this survey, various types of TFET structures are described considering analog, linearity and device parameters like on-current (ION), SS, off-current (IOFF), current ratio (ION/IOFF), threshold voltage (VT) etc., and comparison is done among the designed TFET structures.

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Acknowledgements

The authors would like to thank Mr. G. V. M. Mohan Kumar, Chairman of G. Pullaiah College of Engineering and Technology, Kurnool, India, for encouragement and support during the present research work.

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Authors and Affiliations

  1. Photonics Lab, Department of Electronics and Communication Engineering, G. Pullaiah College of Engineering and Technology, Kurnool, Andhra Pradesh, 518002, India

    Alluru Sreevani & Sandip Swarnakar

  2. Department of Electronics and Communication Engineering, Ravindra College of Engineering for Women, Nandikotkur Road, Kurnool, Andhra Pradesh, 518452, India

    Sabbi Vamshi Krishna

Authors
  1. Alluru Sreevani
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  2. Sandip Swarnakar
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  3. Sabbi Vamshi Krishna
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Contributions

Alluru Sreevani: Investigation; Formal analysis, Writing - original draft. Sandip Swarnakar: Conceptualization; Investigation; Formal analysis, Writing - original draft, Supervision. Sabbi Vamshi Krishna: Validation; Writing - review & editing.

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Correspondence to Sandip Swarnakar.

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Sreevani, A., Swarnakar, S. & Krishna, S.V. Comparative Study of Analog Parameters for Various Silicon-Based Tunnel Field-Effect Transistors. Silicon 14, 9223–9235 (2022). https://doi.org/10.1007/s12633-022-01674-y

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