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Electrostatic-Doped Nanotube TFET: Proposal, Design, and Investigation with Linearity Analysis

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In this paper, the proposed architecture of electrostatic doped based nanotube tunnel field-effect transistor (NT-TFET) has been discussed. The proposed architecture of NT-TFET structure showed improved performance as compared to nanowire TFET (NW-TFET) with the same physical parameters. To analyze the performance of electrostatic doped based NT-TFET, different parameters like device parameter, analog parameter and linearity parameter have been discussed. Electron/hole concentration, electric field, electric potential, energy band diagram and non-local band-to-band tunneling rate (BTBT) have been analyzed as several device parameters. The tunneling rate and tunneling area are greater in NT-TFET as compare to NW-TFET. Analog parameters include drain current, ON-current (ION), OFF-current (IOFF), ION/IOFF, intrinsic gain, output conductance, sub-threshold slope, and threshold voltage have been analyzed. The Drain current (IDS) of value 3*10−5 A/μm, OFF-current is of the order of ~ 10−19 and higher ION/IOFF current ratio of 2*1012 are obtained. The proposed architecture of electrostatic doped based nanotube TFET (NT-TFET) has improved the drain current, steep sub-threshold, OFF-current, and ION/IOFF current ratio.

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  1. VLSI Design Lab., Department of Electronics and Communications, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, 144011, India

    Ashok Kumar Gupta & Ashish Raman

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Gupta, A.K., Raman, A. Electrostatic-Doped Nanotube TFET: Proposal, Design, and Investigation with Linearity Analysis. Silicon 13, 2401–2413 (2021). https://doi.org/10.1007/s12633-020-00584-1

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