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A new structure of electrically doped TFET for improving electronic characteristics

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Abstract

This article put forward a novel device structure of electrically doped tunnel field effect transistor to improve DC and RF performance with suppressed ambipolarity and gate leakage. For suppressing gate leakage and ambipolarity, gate underlapping has been presented, which does not significantly affect the Analog/RF parameters of the device. Further, for improving the device performance a novel initiative of implanting a T-shaped metal layer under gate electrode at source/channel interface with high-k dielectric material has been investigated in the proposed structure. In addition, optimization of gate and electrical drain underlapping is investigated in comparative manner for proposed structure.

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Acknowledgements

The authors would like to thank the Science and Engineering Research Board, Department of Science and Technology, Government of India (established through an act of parliament), for providing the financial support to carry out this work. As this work has been implemented under the project Implementation of Sigma Delta Modulator Using Nanowire Electrically Doped Hetero Material Tunnel Field Effect Transistor (TFET) for Ultra Low Power Applications which is funded by this board.

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Authors and Affiliations

  1. PDPM Indian Institute of Information Technology, Design and Manufacturing Jabalpur, Jabalpur, India

    Deepak Soni

  2. Ramrao Adik Institute of Technology, Nerul, Navi Mumbai, India

    Shivendra Yadav, Rahul Madhukar, Dheeraj Sharma, Mohd. Aslam, Deepak Soni & Neeraj Sharma

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  1. Shivendra Yadav
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  2. Rahul Madhukar
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  3. Dheeraj Sharma
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  4. Mohd. Aslam
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Correspondence to Shivendra Yadav.

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Yadav, S., Madhukar, R., Sharma, D. et al. A new structure of electrically doped TFET for improving electronic characteristics. Appl. Phys. A 124, 517 (2018). https://doi.org/10.1007/s00339-018-1930-9

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  • DOI: https://doi.org/10.1007/s00339-018-1930-9

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