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Evolution of Tunnel Field Effect Transistor for Low Power and High Speed Applications: A Review

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Abstract

Various challenges arise in a continuous scaling of MOSFET like Short Channel Effects, as the channel length shrinks, current is produced in OFF-state, which also results in high leakage current and power dissipation and limits the Sub-threshold Swing (SS) upto 60mV/decade. To reduce these limitations in MOSFET, new MOS devices should be developed to continue scaling. Tunnel Field Effect transistor (TFET) is the promising device suitable to replace the conventional MOSFET. A review on Tunnel field effect transistors (TEFT) to reduce the limitations and overcome the challenges of the conventional MOSFET device are presented in this paper. Various TFET structures with different doping concentrations and materials are discussed to enhance the performance of the device. TFET is suitable for analog applications and radio frequency application because of its high ON state current, low ambipolar current, low SS and low threshold voltage.

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Acknowledgements

The authors would like to thank National Institute of Technology, Warangal, Telangana, India, for providing necessary infrastructure to carry out this work.

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  1. Department of Electronics and Communication Engineering, NIT Warangal, Warangal, Telangana, India

    K. Murali Chandra Babu & Ekta Goel

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Babu, K.M.C., Goel, E. Evolution of Tunnel Field Effect Transistor for Low Power and High Speed Applications: A Review. Silicon 14, 11051–11060 (2022). https://doi.org/10.1007/s12633-022-01826-0

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