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Journal of Computational Electronics

, Volume 17, Issue 3, pp 926–933 | Cite as

Quantum kinetics approach to calculation of the low field mobility in the hole inversion layers of silicon MOSFET’s

  • K. L. Kovalenko
  • S. I. Kozlovskiy
  • N. N. Sharan
Article

Abstract

Analytic expressions for low field mobility have been obtained in the quantized p-type inversion layers. The confining potential is approximated by a triangular quantum well. Main attention is paid to study the dependence of the hole mobility on transverse effective field at different temperatures and concentrations of the ionized impurities. Acoustic and optical phonons, charged impurities, and surface roughness have been adopted as scattering system. Theoretical considerations are based on the quantum kinetic equation and special form of the non-equilibrium distribution function (shifted Fermi distribution). Calculations show that the acoustic phonon limited mobility does not depend on the transverse effective electrical field \(E_\mathrm{eff} \) and has a temperature dependence closer to experiment than known expression for the universal mobility. At the same time, the mobility limited by scattering with optical phonons and surface roughness is proportional to \(E_\mathrm{eff} ^{-1/3}\) and \(E_\mathrm{eff} ^{-2}\), respectively. The mobility limited by scattering by ionized impurities is a weak function of the transverse effective field. Results of the calculations are compared with known experimental data.

Keywords

Low field mobility P-type quantized inversion layers Silicon 

Notes

Acknowledgements

Authors thank to Dr. M. Lisianskiy for valuable help.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.V. Lashkaryov Institute of Semiconductor PhysicsNational Academy of Sciences of UkraineKievUkraine

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