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A quantum kinetic approach for calculating low-field mobility in black phosphorus crystals and multilayer phosphorene

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Abstract

Analytic expressions for the low-field mobility have been obtained in black phosphorus crystals and multilayer phosphorene. Acoustic and optical phonons, charged impurities and surface roughness are adopted as the scattering system. Theoretical considerations are based on a quantum kinetic equation and special form of the non-equilibrium distribution function (shifted Fermi distribution). Our calculations reveal that the hole mobility in black phosphorus crystals is limited by scattering with both acoustic and optical phonons over a wide temperature range of 10–400 K. The hole mobility in multilayer phosphorene is thus limited by impurity and optical phonon scattering in this temperature range.

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Authors and Affiliations

  1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, prospect Nauki, Kiev, 03028, Ukraine

    K. L. Kovalenko, S. I. Kozlovskiy & N. N. Sharan

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  1. K. L. Kovalenko
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  2. S. I. Kozlovskiy
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  3. N. N. Sharan
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Correspondence to S. I. Kozlovskiy.

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Kovalenko, K.L., Kozlovskiy, S.I. & Sharan, N.N. A quantum kinetic approach for calculating low-field mobility in black phosphorus crystals and multilayer phosphorene. J Comput Electron 17, 1549–1556 (2018). https://doi.org/10.1007/s10825-018-1255-0

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