Abstract
In this paper, we investigate the mobility \(\mu \) and thermopower S of a quasi-two-dimensional hole gas (Q2DHG) confined in a Si/Si1-xGex/Si finite square quantum well (QW) due to different scattering mechanisms such as alloy disorder (AD), surface roughness (SR), misfit deformation potential (DP), piezoelectric charge (PE), remote impurity (RI), acoustic phonon (ac) via deformation potential (acDP) and piezoelectric fields (acPE). We use the screened theory in the calculation of the mobility due to all considered scattering mechanisms and investigate the dependence of screening effects on QW height. We show that the infinite model underestimates the surface roughness-, acoustic phonon-limited and total mobility of narrow QWs especially at high temperatures T. We find that, for system parameters considered, Sd (Sg) decreases slightly (increases notably) with increasing barrier height, and at low hole densities the overall thermopower is determined mainly by Sd and its dependence on barrier height is very weak. Our results also indicate that, in the case of narrow QWs, the infinite model overestimates the total thermopower and the screening reduces remarkably both Sg and Sd particularly in the range of high T.
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TVT: Analytical calculations, Software, Visualization, Manuscript draft preparation. VVT: Analytical calculations, Software. NQK: Supervision, Validation, Manuscript writing and reviewing. DKL: Manuscript improvement.
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Van Tuan, T., Khanh, N.Q., Van Tai, V. et al. Barrier penetration and screening effects on hole mobility and thermopower in a Si/Si1-xGex/Si finite square quantum well. Indian J Phys 97, 2961–2969 (2023). https://doi.org/10.1007/s12648-023-02662-7
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DOI: https://doi.org/10.1007/s12648-023-02662-7