Abstract
A chemical flux of sulfur hexafluoride (SF6) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF6. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching.
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Ray, S.K., Maiti, C.K. & Lahiri, S.K. Chemically assisted ion beam etching of silicon and silicon dioxide using SF6 . Plasma Chem Plasma Process 15, 711–720 (1995). https://doi.org/10.1007/BF01447068
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DOI: https://doi.org/10.1007/BF01447068