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Formation of Nanosized Structures on the Silicon Surface by a Combination of Focused Ion Beam Methods and Plasma-Chemical Etching

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Abstract

The aim of this paper is to study the modes and determine the patterns of plasma-chemical processing in a fluoride plasma of a silicon surface locally modified with gallium ions. Experimental and theoretical studies of the interaction of the surface of silicon wafers with focused ion beams (FIB) and fluoride plasma are carried out. The general regularities of the influence of the FIB and plasma-chemical etching (PCE) modes on the etching rate, surface roughness, and the angle of inclination of the structure walls are determined, and the manifestation of activation and masking effects during the PCE of a silicon surface locally modified by FIB is established. It is found that, in the case of the masking effect, the selectivity is 195.26, and the rate of formation of structures by the combination of FIB and PCE methods is 3.23 nm/s.

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Funding

This study was supported by the Russian Science Foundation (grant no. 20-69-46076). The results were obtained using the infrastructure of the Scientific and Educational Center “Nanotechnologies” of the Southern Federal University.

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Authors and Affiliations

  1. Institute of Nanotechnology, Electronics and Equipment Engineering, Southern Federal University, 347928, Taganrog, Russia

    V. S. Klimin, Yu. V. Morozova, I. N. Kots & O. A. Ageev

  2. Federal Research Center Southern Scientific Center, Russian Academy of Sciences, 344006, Rostov-on-Don, Russia

    Z. E. Vakulov

Authors
  1. V. S. Klimin
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  2. Yu. V. Morozova
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  3. I. N. Kots
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  4. Z. E. Vakulov
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  5. O. A. Ageev
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Correspondence to Yu. V. Morozova.

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Klimin, V.S., Morozova, Y.V., Kots, I.N. et al. Formation of Nanosized Structures on the Silicon Surface by a Combination of Focused Ion Beam Methods and Plasma-Chemical Etching. Russ Microelectron 51, 236–242 (2022). https://doi.org/10.1134/S1063739722030064

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  • DOI: https://doi.org/10.1134/S1063739722030064

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