Abstract
The results of an investigation into the etching rate and selectivity of silicon substrates, as well as SiO2, W, TiN, TiC, and NbN films, with the use of chemically active compounds CF4, C3F6, and SF6 as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to SiO2 in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Maishev, Yu.P., Shevchuk, S.L., and Kudrya, V.P., Generation of fast neutral beams based on closed drift ion sources, Russ. Microelectron., 2014, vol. 43, no. 5, pp. 345–351.
Goldspink, G.F. and Revell, P.J., The use of saddle-field ion sources for etching semiconductor materials, Microelectronics J., 1980, vol. 11, no. 6, pp. 13–17.
Revell, P.J. and Evans, A.C., Ion beam etching using saddle field sources, Thin Solid Films, 1981, vol. 86, nos. 2–3, pp. 117–124.
Revell, P.J. and Goldspink, G.F., Reactive ion beam etching of silicon compounds with a saddle-field ion source, J. Vac. Sci. Technol., 1981, vol. 19, no. 4, pp. 1398–1402.
Kuwano, H. and Shimokawa, F., Silicon dioxide fine patterning by reactive fast atom beam etching, J. Vac. Sci. Technol. B, 1988, vol. 6, no. 5, pp. 1565–1569.
Lee, D.H., Park, B.J., Min, K.S., and Yeom, G.Y., CF4-Based neutral-beam etch characteristics of Si and SiO2 using a low-angle forward-reflected neutral-beam etching system, J. Korean Phys. Soc., 2006, vol. 49, no. 6, pp. 2307–2310.
Lee, D.H., Jung, S.J., Park, S.D., and Yeom, G.Y., Characteristics of neutral beam generated by reflection on a planar-type reflector and its etching properties, Surf. Coat. Technol., 2004, vol. 177–178, pp. 420–425.
Lee, D., Park, B., and Yeom, G., Effects of axial magnetic field on neutral beam etching by low-angle forward-reflected neutral beam method, Jap. J. Appl. Phys. Lett., 2005, vol. 44, no. 2, pp. L63–L65.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © Yu.P. Maishev, S.L. Shevchuk, V.P. Kudrya, 2014, published in Mikroelektronika, 2014, Vol. 43, No. 6, pp. 415–418.
Rights and permissions
About this article
Cite this article
Maishev, Y.P., Shevchuk, S.L. & Kudrya, V.P. Investigation into the selectivity of etching various materials by fast neutral particle beams. Russ Microelectron 43, 388–391 (2014). https://doi.org/10.1134/S1063739714060067
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063739714060067