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Temperature dependence of the band gap of the single-crystal compounds In2S3 and AgIn5S8

  • Electronic Properties of Semiconductors
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Abstract

For the single-crystal compounds In2S3 and AgIn5S8 produced by chemical gas-transport reactions and the Bridgman method (vertical version), the transmission spectra in the region of the fundamental absorption edge are studied in the temperature range from 20 to 300 K. From the recorded spectra, the band gaps of the In2S3 and AgIn5S8 single crystals are determined and the temperature dependences of the band gaps are constructed. It is established that, as the temperature is lowered, the band gap increases for both of the compounds. Calculation of the temperature dependences is performed. It is shown that the calculated and experimental values are in agreement with each other.

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Authors and Affiliations

  1. Belarusian State University of Information and Radio Electronics, Minsk, 220013, Belarus

    I. V. Bodnar

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  1. I. V. Bodnar
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Correspondence to I. V. Bodnar.

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Original Russian Text © I.V. Bodnar, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 9, pp. 1167–1172.

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Bodnar, I.V. Temperature dependence of the band gap of the single-crystal compounds In2S3 and AgIn5S8 . Semiconductors 50, 1145–1150 (2016). https://doi.org/10.1134/S1063782616090050

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  • DOI: https://doi.org/10.1134/S1063782616090050

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