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Band Gap of (In2S3)x(AgIn5S8)1 –x Single-Crystal Alloys

  • MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS
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Abstract

In2S3, AgIn5S8, and (In2S3)x(AgIn5S8)1 – x-alloy single crystals are grown by the Bridgman method. The composition and structure of the crystals are determined. It is established that both the initial compounds and their alloys crystalize with the formation of the cubic spinel structure. The unit-cell parameters of the single crystals are calculated, and the dependences of these parameters on the alloy composition are constructed. It is shown that, in the system, Vegard’s law is satisfied. The transmittance spectra of the crystals in the region of the fundamental absorption edge are studied at room temperature, and the band gap (Eg) is determined. It is shown that Eg varies with the composition parameter x, with some deviation from a linear dependence.

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Funding

The study was supported by the Belorusian Republican Foundation of Fundamental Research, project no. F16-028.

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Authors and Affiliations

  1. Belarusian State University of Information and Radio Electronics, 220013, Minsk, Belarus

    I. V. Bodnar, A. A. Feschenko & V. V. Khoroshko

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  1. I. V. Bodnar
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  2. A. A. Feschenko
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  3. V. V. Khoroshko
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Correspondence to I. V. Bodnar.

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The authors declare that they have no conflict of interest.

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Translated by E. Smorgonskaya

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Bodnar, I.V., Feschenko, A.A. & Khoroshko, V.V. Band Gap of (In2S3)x(AgIn5S8)1 –x Single-Crystal Alloys. Semiconductors 54, 1611–1615 (2020). https://doi.org/10.1134/S1063782620120039

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  • DOI: https://doi.org/10.1134/S1063782620120039

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