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Raman Shift of Surface Reaction and Plasma Induced Surface Damage by TNF3/BNF3 Reactive Ion Etching Process

  • Original Article - Theory, Characterization and Modeling
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Abstract

We examined the conditions for process optimization with the exposure of hot H2/NF3 mixture to a chemical oxide on the Si surface. Etching characteristics are described; then the etching mechanism is discussed based on the Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) observations that occurred during the etching. This research viewed the hydrogen/NFs based reactive clean process as an oxide, silicon clean process technology to enhance product reliability by improving light controlled etching, which is considered one of the factors that can weaken contact resistance when forming gates and below 10 nm pattern profiles. Furthermore, the existing properties that occur when applied to nanoscale sized holes and trenches with high aspect ratio were also discussed.

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Acknowledgements

This work was supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program-The Development of next-generation intelligent semiconductor technology) (20012609, Atomic Layer Etching Solution and System for Real Time Process Control) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). This research was also supported by the Chung-Ang University Research Scholarship Grants in 2020

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Authors and Affiliations

  1. School of Integrative Engineering, Chung-Ang University, Seoul, 06974, Korea

    Ho Jae Shim, Jin Seok Kim, Da Won Ahn, Jin Hyun Choe, Eunsu Jung & Sung Gyu Pyo

  2. Department of Life Science (BK21 Program), Chung-Ang University, Seoul, 06974, Korea

    Donghyuk Oh & Sung Chul Lee

  3. Department of Otorhinolaryngology-Head and Neck Surgery, Chung-Ang University, Seoul, 06974, Korea

    Kyung Soo Kim

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  1. Ho Jae Shim
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  2. Jin Seok Kim
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Correspondence to Sung Chul Lee or Sung Gyu Pyo.

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Shim, H.J., Kim, J.S., Ahn, D.W. et al. Raman Shift of Surface Reaction and Plasma Induced Surface Damage by TNF3/BNF3 Reactive Ion Etching Process. Electron. Mater. Lett. 18, 321–329 (2022). https://doi.org/10.1007/s13391-022-00341-z

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  • DOI: https://doi.org/10.1007/s13391-022-00341-z

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