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Pressure-Dependent Etching Mechanism and Induced Dielectric Properties Variation of BZN Thin Films in SF6/Ar Plasma

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Abstract

Reactive ion etching was used to study bismuth zinc niobate (BZN) thin films etching in SF6/Ar plasma as a function of pressure. The etch rate increases as the pressure increases from 1 to 20 mTorr and decreases when the pressure exceeds 20 mTorr. The film surfaces were analyzed to determine the etching mechanism using X-ray photoelectron spectroscopy. Pressure is found to have an effect on etch reaction and non-volatile etch by-products removal through different ion density and energy, thus resulting in varying compositions, element chemical binding states on the film surface. Dielectric properties of the film, modified by SF6/Ar plasma, show an obvious variation with pressure. The permittivity shows a slight decrease in the range of 1–20 mTorr but a sharp decrease at 30 mTorr. Instead, the dielectric loss variation exhibits an opposite trend.

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Acknowledgments

The authors wish to thank the financial support from “The National Natural Science Foundation of China, [NSFC] (61204088)” and “the Fundamental Research Funds for the Central Universities” (ZYGX2011J029).

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, People’s Republic of China

    Liping Dai, Wenping Song, Shuya Wang, Zhiqin Zhong & Guojun Zhang

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  1. Liping Dai
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  2. Wenping Song
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  3. Shuya Wang
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  4. Zhiqin Zhong
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  5. Guojun Zhang
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Correspondence to Liping Dai.

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Dai, L., Song, W., Wang, S. et al. Pressure-Dependent Etching Mechanism and Induced Dielectric Properties Variation of BZN Thin Films in SF6/Ar Plasma. Plasma Chem Plasma Process 35, 1119–1127 (2015). https://doi.org/10.1007/s11090-015-9641-x

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  • DOI: https://doi.org/10.1007/s11090-015-9641-x

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