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Light trapping enhanced broadband photodetection and imaging based on MoSe2/pyramid Si vdW heterojunction

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Abstract

Two-dimensional (2D) layered materials have been considered promising candidates for next-generation optoelectronics. However, the performance of 2D photodetectors still has much room for improvement due to weak light absorption of planar 2D materials and lack of high-quality heterojunction preparation technology. Notably, 2D materials integrating with mature bulk semiconductors are a promising pathway to overcome this limitation and promote the practical application on optoelectronics. In this work, we present the patterned assembly of MoSe2/pyramid Si mixed-dimensional van der Waals (vdW) heterojunction arrays for broadband photodetection and imaging. Benefited from the light trapping effect induced enhanced optical absorption and high-quality vdW heterojunction, the photodetector demonstrates a wide spectral response range from 265 to 1550 nm, large responsivity up to 0.67 A·W−1, high specific detectivity of 1.84 × 1013 Jones, and ultrafast response time of 0.34/5.6 μs at 0 V. Moreover, the photodetector array exhibits outstanding broadband image sensing capability. This study offers a novel development route for high-performance and broadband photodetector array by MoSe2/pyramid Si mixed-dimensional heterojunction.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. U2004165, U22A20138, and 11974016), the Natural Science Foundation of Henan Province, China (No. 202300410376), Henan Provincial Key Science and Technology Research Projects (No. 212102210131), and the Open Fund of National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials (No. HKDNM2021012).

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Authors and Affiliations

  1. School of Physics and Microelectronics, Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou, 450052, China

    Shaoqin Pan, Jinjin Hei, Yakun Xing, Pei Lin, Zhifeng Shi, Yongtao Tian, Xinjian Li & Di Wu

  2. Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA, 92093, USA

    Shuo-En Wu & Longhui Zeng

  3. Department of Electronic Engineering, Chinese University of Hong Kong, Hong Kong, 999077, China

    Zhiwen Zhou

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  1. Shaoqin Pan
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Correspondence to Longhui Zeng, Pei Lin or Di Wu.

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Pan, S., Wu, SE., Hei, J. et al. Light trapping enhanced broadband photodetection and imaging based on MoSe2/pyramid Si vdW heterojunction. Nano Res. 16, 10552–10558 (2023). https://doi.org/10.1007/s12274-023-5650-x

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