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Optical Second-Harmonic Generation of Terahertz Field from n-type InSb Semiconductors

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Abstract

In this paper, optical second-harmonic generation of terahertz field from n-type InSb semiconductors is investigated. The inter-band transitions generate electron-hole charge carriers in narrow bandgap semiconductors. The nonlinear interaction of terahertz fields with charge carriers within the absorption depth produces a nonlinear current at twice of the fundamental THz frequency, which generates second-harmonic terahertz photons. The conversion efficiency of second-harmonic generation is enhanced by the resonant density perturbations of the charge carriers. The results based on computational fluid dynamics show the generation of second-harmonic radiation spectrally centered at 2 THz frequency with 8 MeV energy. This mechanism for optical second-harmonic generation of terahertz may open new realms of semiconductor characterization, for which terahertz techniques are ideally suited.

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Data Availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Funding

This work was financially supported by the Department of Science and Technology, Govt. of India under DST-RFBR joint proposal (INT/RUS/RFBR/394).

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  1. Department of Physics and Astrophysics, University of Delhi, Delhi, 110 007, India

    Devki Nandan Gupta

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  1. Devki Nandan Gupta
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Correspondence to Devki Nandan Gupta.

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Gupta, D.N. Optical Second-Harmonic Generation of Terahertz Field from n-type InSb Semiconductors. Plasmonics 16, 419–424 (2021). https://doi.org/10.1007/s11468-020-01291-8

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  • DOI: https://doi.org/10.1007/s11468-020-01291-8

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