Abstract
The RuO2-doped organic polymer composite structure was used as the interface to study the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical parameters of the structure interlaid with RuO2:PVC were investigated using the I–V characteristics in the dark and under definite illuminations. The values of saturation current (I0), barrier height (ΦB0) at zero-bias, ideality factor (n), series and shunt resistances (Rs and Rsh) were calculated by using different methods such as thermionic emission, Ohm’s law, Cheung and Norde functions. They were found to be intensely depend on illumination levels and voltage. Forward bias I–V data were used to obtain energy-dependent profiles of interface-states (Nss) for each illumination level. Moreover, the open-circuit voltage (Voc), short circuit current (Isc), filling factor (FF), and efficiency (η) of the fabricated Schottky structure were found as 0.118 V, 6.4 μA, 46%, and 0.088% under 50 mW/cm−2, respectively. According to the findings, the RuO2:PVC organic interlayer is light-sensitive and can thus be used in optoelectronic applications, such as photodetectors and photodiodes.
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This study was supported by Gazi University Scientific Research Project. (Project Number: GU-BAP.05/2019-26)
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Elamen, H., Badali, Y., Ulusoy, M. et al. The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface. Polym. Bull. 81, 403–422 (2024). https://doi.org/10.1007/s00289-023-04725-5
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DOI: https://doi.org/10.1007/s00289-023-04725-5